Page 103 - Wire Bonding in Microelectronics
P. 103

82     Cha pte r  F o u r


                 If both bonds are on the same level (H = 0), and the loop is pulled
              vertically (ϕ = 0), in the center (ε = 0), and (θ  = θ ), then the more
                                                     t   d
              familiar equation is obtained:

                                f  =       F                        (4-4)
                                            θ
                                wt  sinθ  + cos tanθ
                                       t     t    d
              where θ  = θ  = θ. Note that, in general, for bonds of a given strength,
                     t  d
              larger values of h/d will result in higher pull force, F, values. Equivalent
              equations using angles θ , θ , and F are:
                                   t  d
                               f  =        F                        (4-5)
                                wd  sinθ  + cosθ  tanθ
                                       d      d   t
                 Note that all of the above equations are solved for the force or ten-
              sion in the wire, f and f (usually at break). If a reader wants to calcu-
                           wt    wd
              late the actual pull force, then the equations must be solved for F. A
              wire will break when either f  or f first reaches its breaking strength.
                                      wt  wd
              This entails assigning a breaking strength (value) to each side of the
              wire. Typically, this is about 60 to 75% of the manufacturer-specified
              breaking load of the wire for Al wedge bonds (due to heel deformation
              and metallurgical overworking), but is nearer 90% for Au bonds (either
              ball or crescent bond break). The wire normally breaks just above the ball
              in the heat-affected zone (see Chap. 3).
                 A plot of the calculated pull force (F) at wire rupture for wedge
              bonds is given for a typical two-level semiconductor device-bond
              configuration in Fig. 4-2, pulled straight up (ϕ = 0) at the center of the
              loop. With everything else being equal, it is apparent that the higher
              the loop height, the higher the bond pull force will be. For a given
              bond-to-bond spacing, d, lowering the loop will result in a force multi-
              plier, increasing the values of f and f for a given force at the hook, F,
                                       wt   wd
              and thus yielding a lower force at wire rupture.
                 The position of the hook (indicated as εd in Fig. 4-1) and the pull
              angle, 4, will significantly affect the distribution of forces at the bonds.
              One can choose a ε or ϕ value that will give equal forces on each bond,
              and it will result in a more equal test of both bonds. This is possible
              with some automated pull testers. However, manual pull-test opera-
              tors would be significantly slowed by such a procedure. In addition,
              most specifications (such as ASTM F459-06 [4-1] and MIL-STD-883
              G/H, Method 2011) [4-7], and most in-house requirements specify
              that the hook be placed in the center between the bonds. So this is con-
              sidered the standard hook-placement position for normal testing of
              wedge bonds, but not for fine pitch ball bonds which may peel the
              bond pad (see Chap. 9 and its references). We note that major accepted
              specifications must be changed to allow such hook placement for
              Cu/Lo-k devices and other fine pitch pull tests! (MIL-STD-883G/H
              now allows non-center hook placement.) Whenever the hook is moved
              close to a wedge bond, a higher proportion of the wire force is applied
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