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76    Cha pte r  T h ree

















              FIGURE 3B-2  A temperature cycled Cu ball bond (encapsulated) that developed
              a neck crack.

                 There are however manufacturing facilities that currently manu-
              facture copper wire products but mostly limited to power devices
              where large diameter wire is used.
                 Small-diameter wire (<33 µm) is still a challenge not because of
              bonding capability but because of reliability concerns as indicated
              above.


         Conclusion
              There is no question copper is a cheaper material but also one that
              brings new challenges to the bonding engineers. It may also be a cost-
              effective process in the eyes of a product manager but when the extra
              care and attention is required, it is weighed against the existing gold
              process and then we should ask ourselves, are the net savings
              worth?


         References
               3-1  Douglas, P., Custom Chip Connection, private communication. For a discussion
                 of some small diameter bonding wire characteristics, see also, New Bonding
                 Wire Developments, Microelectronic Packaging Technology: Materials and
                 Processes, Proc. of the 2nd ASM International Electronic Materials and Processing
                 Congress, Philadelphia, PA, Apr. 24–28, 1989, pp. 8902–8908.
                3-2  Jones, W. K., Liu, Y. and Morrone, A., “The Effect of Thermal Exposure on the
                 Structure and Mechanical Properties of Al-1% Si Bonding Wire,” Proc. of the
                 1993 International Symposium on Microelectronics (ISHM), Nov. 9–11, Dallas, TX,
                 1993, pp. 445–450.
                3-3  U.S. Patent 3,272,625, Sept. 13, 1966. Beryllium-Gold Alloy and Article Made
                 Therefrom, Brenner, Bert, assigned to Sigmund Cohn Corp.
                3-4  Ohno, Y., Ohzeki, Y., et, al. “Factors Governing The Loop Profile in Au Bonding
                 Wire.,” Proc. 1992 Electronic Components & Technology Conf., San Diego, CA,
                 May 18–20, 1992, pp. 899–902.
               3-5  Hu, S. J., Lim, R. K. S., and Sow, G. Y., “Gold Wire Weakening in the Thermosonic
                 Bonding of the First Bond”, IEEE Trans. on CPMT-Part A, Vol. 18, Mar. 1995,
                 pp. 230–234.
                3-6  Levine, L. and Sheaffer, M., “Wire Bonding Strategies To Meet Thin Packaging
                 Requirements,” Part 1,Solid State Technology, Vol. 36, Mar. 1993, pp. 63–70,
                 Part 2 is in July 1993, pp. 103–109.
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