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Amplifier Design



                                                                               Amplifier Design  153



















                        Figure 3.52 The complex series impedance of a power transistor.

                        where Z       output impedance of the transistor, ohms
                                OUT
                                V   DC voltage at the collector
                                  C
                               P      output power, watts
                                OUT
                        There is, of course, a practical limit to this high collector voltage concept due
                        to the available on-board (PCB) voltages, as well as internal transistor design
                        issues.
                          In selecting a power transistor for our design, certain factors and specifica-
                        tions must be taken into consideration. The most important are: power output
                        (P   ), V , packaging, cost, gain, frequency of operation, power input
                          OUT    CC
                        (P     ), class (AB, B, C, or A), ruggedness, and built-in matching networks.
                          IN(MAX)
                        The gain at the frequency of operation for the transistor must, of course, fit the
                        requirements as specified, but choosing a power transistor with an excessive
                        f will result in a more delicate device. This is because one way for the tran-
                         T
                        sistor designer to increase the frequency of its operation is by making the
                        device physically smaller—and a smaller device lowers its safe power dissipa-
                        tion levels. Most power transistors will also be specifically characterized for
                        different Q points—normally Class C or Class AB. If the transistor is used at
                        another bias Q point, its parameters, such as gain, impedance, and even device
                        lifetime, will change. In addition power gain is ordinarily at its peak with
                        Class A amplifiers, and begins dropping as the forward bias is decreased; with
                        Class C having the lowest power gain of any amplifier type. However, this
                        change in bias will also affect the transistor’s tolerance to impedance mis-
                        matches, which will be the greatest for Class C–biased amplifiers, decreasing
                        as the device gets closer to Class A.
                          As most power transistors run at low supply voltages, current draw can be
                        quite high, which demands chokes and inductors capable of handling these
                        currents. Another problem with power amplifiers over small signal types is
                        that any high-Q circuits at the amplifier’s output tank will result in high cir-
                        culating currents within the tank, causing very high dissipative losses and
                        low amplifier efficiency. Unfortunately, this is in direct conflict with any



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