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Amplifier Design



                                                                               Amplifier Design  201

















                        Figure 3.106 The output power of a single MMIC compared to two paralleled MMICs.


                          As stated, paralleling two MMICs will increase their P1dB by 3 dB as com-
                        pared to a single device, and Fig. 3.107 shows a recommended circuit for such
                        a two-MMIC setup. This design maintains the MMICs’ input and output
                        impedances by using a lumped  Wilkinson power divider/combiner network,
                        along with a single DC bias line. The Wilkinson network, unfortunately, will
                        also make the amplifiers much more narrowband. And, since MMICs are not
                        always completely resistive, some tuning out of the small MMIC reactances
                        may be needed by the tweaking of C and C to peak the gain at the desired
                                                           1      6
                        frequency of operation.
                          Since directly paralleling discrete high-frequency power transistors makes
                        their already very low input/output impedances even lower, effective low-loss
                        matching can become a problem. With these types of discrete designs, it is bet-
                        ter to first match each active device first, preferably to 100 ohms in a 2  par-
                        allel amplifier, and then directly combine, as shown in Fig. 3.105. Or, match
                        each active device to 50 ohms, and then utilize the combiner of Fig. 3.107 to
                        blend the single amplifiers into a parallel amplifier stage (see “Splitters and
                        Combiners”).
                          Formerly, indiscriminant direct paralleling of active devices would lead to
                        uneven current distribution among the transistors, and the subsequent ther-
                        mal destruction of the affected transistor with the most current draw. This is
                        not a problem with the vast majority of modern power transistors because of
                        emitter ballast resistors that are placed internally within the semiconductor
                        die itself.


            3.6.2 Design of parallel MMIC amplifiers
                        As mentioned above, paralleling two amplifiers will double the available out-
                        put power, increasing it by 3 dB. To design the 50-ohm MMIC parallel power
                        amplifier of Fig. 3.107, bias as instructed in Sec. 3.4.2 under “MMIC Biasing
                        Procedure,” couple as in Sec. 3.4.3, “MMIC Coupling and Decoupling,” and
                        use the following power splitter/combiner formulas to design the input/output
                        network:



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