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in  the data hold time being fast enough. However, when a very fast processor is
                interfaced to a slow EPROM, the hold time can be a problem. If the calculated hold
                time is a problem, the solution is to use a data buffer  (more about that later) or
                go to a faster EPROM.
                   Calculating the timing for flash memories is the same as for EPROMs except that
                you  also must take into account the write timing. In  this respect, flash memory
                timing is similar to a RAM, which we will discuss next.




                 RAM


                Two  general  types  of  RAM  are  used  in  embedded  systems. The  first  and  most
                common is static RAM (SRAM). Static means that the memory cells do not change
                unless they are rewritten or the power is removed. A static RAM consists of an array
                of flip-flops that are selected by a decoding array inside the chip. Static RAM usually
                comes in x8 configurations, but there are some x16 devices.
                   A  special case of  static RAM  is  nonvolatile RAM  (NVRAM). This consists of  a
                special low-power RAM chip packaged with a battery  (usually lithium). The com-
                bination also includes power-switching circuitry that operates the RAM from system
                power when available and from the battery when system power is removed. The
                switching logic also protects  the  RAM  from  inadvertent writes when  the  power
                is  below  a  certain  threshold,  usually when  the  system  power  is  coming  on  or
                going off.
                   The other type of RAM is dynamic RAM (DRAM). Dynamic RAM is used in per-
                sonal computers (PCs). It stores information as charge on a tiny capacitor, one per
                data  bit.  Because  the  capacitor  charge  bleeds  off,  the  data  must  be  refreshed
                periodically. DRAM multiplexes the address pins into row and column addresses.
                The row address is latched in with a signal called RAS (row address strobe), and
                 the column address is latched in with a signal called CAS (column address strobe).
                The  need  to  multiplex  the  addresses,  generate  the  strobes,  and  refresh  the
                part make DRAM more difficult to design with. Dynamic RAM can be made smaller
                than static RAM, so a single DRAM chip will be denser than a corresponding static
                RAM chip.


                 Calculating RAM Access Time
                Figure 2.7 shows an SRAM IC connected to a microprocessor with a multiplexed
                addreddata bus. Note that the connections are identical to those for an EPROM
                with  the  exception of  the  added write enable  signal, which is  connected  to the
                microprocessor -WR  signal. Although not shown, some RAM ICs have multiple chip
                select inputs.


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