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The address is presented to the DRAM through a multiplexer. At the start of the
                cycle  (see Figure  2.10), the  low-order  address bits  (A0 through A8)  are  passed
                through to the DRAM and -RAS  is pulsed, latching the row address into the DRAM.
                After  the  address hold  time  is  met, the  SEL line  to  the  multiplexer  is  toggled,
                causing the high-order  address (A9 through A17) to be presented  to the DRAM.
                After the column address setup time is met, -CAS  is pulsed, latching the column
                address. Data from the DRAM is available after the CAS access time.
                  The direction signal (R/W)  is passed directly to the DRAM. If the WE pin on
                the DRAM is low when -CAS  goes low, the DRAM will start a write cycle. If WE goes
                low ufte-CAS  goes low, the DRAM will do a read cycle, driving read data onto the
                data bus, followed by a write cycle. This is called a read dzh Wzte (rmw) cycle. Write
                data is latched on the leading edge of -WE  or -CAS,  whichever is later. Few embed-
                ded processors execute rmw cycles. The reason this timing is important is because
                you need to avoid bus contention for processors where the write signal may be later
                than -CAS.  Note, however, that the data is latched and must be stable before -WE
                or -CAS,  whichever occurs later.
                  Figure 2.11 shows a method of implementing the timing logic for Figure 2.10.
                The address setup time from the processor, prior to the leading edge of -DS,  meets
                the DRAM row address setup time, so -RAS  can go active with -DS.
                  After Delay 1, which is the row address hold time, the select signal to the multi-
                plexer changes states, which switches the DRAM address inputs from the row to the
                column address. After Delay 2, which is the column address setup time, -CAS  is
                driven low. -RAS  goes back high after Delay 3, which is the row address hold time.
                -RAS  could  be  held  active throughout  the  entire  memory  cycle, but  removing
                -RAS  after -CAS  is asserted makes it easier to meet the -RAS  precharge time.

                          *
                                                                      SELECT TO ADDRESS MULTIREXER
                                                                      .CAS TO DRAM
                -OS




                         -DS                       /                  -RAS  TO   DRAM
                         -RAS         1      /
                       SELECT           /
                         -CAS                       /
                       DELAY 1        -I
                       DELAY 2
                       DELAY 3

                Figure 2.11
                Typical DRAM Timing Logic.


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