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Electl-olgtes  8 7


          the effect of the binding enthalpy of an associated ion can significantly affect the
          population  of  free  vacancies  at  low  temperatures.  At  lower  temperatures,
          association is almost complete, so that
              POMLel  " No1                                                  (6)


          and

              [Vi] = (B/T)exp(-E,/RT)                                        ( 7)

          where E,  is the association binding energy and B a constant. Kilner [18] has
          pointed  out  that both  calculated  and  experimental data  for  the  association
          enthalpies could be correlated with the ionic radius of the dopant. Experimental
          [19] and calculated [20] E,  values in CeO2-MzO3 are shown in Figure 4.4 The
          minimum association enthalpy occurred when the ionic radii of  the host  and
          the dopant  were  close to  each other  such that the lattice  elastic  strain was
          minimised. Kilner further postulated that this was a universal effect, common to
          all acceptor-doped oxides.

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                             0.08   0.09   0.10   0.11   0.12   0.13
                                          Ion Size hm)
          Figure 4.4  Calculated and experimental vacancy association enthalpy for  oxygen conductivity in doped
                            cerinplottedngainst theionic radiiofthedopant ions.

            Arachi  et  al.  [lo] reported  dependence of  the  association  enthalpy  on the
          dopant ion radius in Zr02-M203 systems. The activation energy for conduction,
          E, in Eq.  (3) is expressed as the sum of  the enthalpy  for motion, Em, and the
          association binding energy, E,,  thus
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