Page 343 - Introduction to Information Optics
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328                    6. Interconnection with Optics

       //. Reactive Ion Etching
          RIE processes are combinations of both physical (sputtering) and chemical
       etching actions. Basically, the physical component of the etching process
       provides better anisotropy on the side walls, but results in inferior surface
       quality; whereas, chemical etching tends to produce smooth etched surfaces but
       creates curved side walls. The extent of each etching action can be adjusted
       through optimizing the RIE conditions to obtain the best result; i.e., to have
        both straight side walls and smooth surface quality. To make physical etching
       dominant, the conditions can be selected with low pressure, high RF power,
        and use of a less reactive ion. Similarly, chemical etching can be enhanced
        through increasing the pressure, lowering the RF power, or using more reactive
        ions. In our process, the optimized RIE conditions are chamber pressure 15
       mTorr, RF power 150 W, and O 2 (etchant gas) flow rate 10-SCCM (cubic
       centimeters per minute at standard temperature and pressure). A special holder
       is used to hold the sample with a 45° slope angle with respect to the electrode
       in the RIE chamber. The ion stream coming down vertically to the sample
        bombards the polymer through the windows in the aluminum film at a 45
       angle with respect to the substrate. The aluminum mask does not wear down
       and protects the other parts against RIE. Two parallel 45° slanted side walls
       are formed in the desired position and direction under each opening window
       after RIE etching. A Faraday cage is used to cover the sample and the holder
       during the etching. A modified Faraday cage having a 45° tilted grid surface,
       which can change the direction of the ion stream by 45°, can be used to put
       the sample horizontally on the electrode and cover the area to be etched with
       the cage, with the tilt surface perpendicular to the direction along which the
       micromirror is to be etched. With this method, a larger sample can be
       processed and etched more uniformly.
       III. Aluminum Removal
          In the final step, the aluminum mask is removed through wet etching.


          The micromirror couplers fabricated by the above procedures were exam-
       ined using a-step and SEM. Usually with the conditions given above, 120
       minutes of etching results in a 7-micron etching depth, which is sufficient to
       terminate the waveguide layer with a 45° TIR micromirror coupler. The SEM
       (scanning electronic microscope) is used to inspect the etching profile and the
       surface quality. The sample to be inspected is cut into small pieces to meet the
       size requirement of the SEM specimen holder. The sample is tilted to a proper
       angle to view the cross section and obtain the information of the etched profile.
       The quality of the 45° sloped surface can also be checked through SEM under
       a proper viewing angle and magnification. The SEM micrograph of the cross
       section of a 45° microcoupler is shown in Fig. 6.28 and a photograph showing
       a waveguide mirror coupler acting as a input coupler is shown in Fig. 6.29.
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