Page 347 - Introduction to Information Optics
P. 347

332                     6, Interconnection with Optics


















       Fig. 6.32. (a) SEM photograph of the MSM photodetector with 2/an finger width and spacing.
       (b) Polymer channel waveguide array aligned with MSM photodetector array.


       exists. To overcome this potential well to produce photoresponse, the bias
       voltage applied to the detector has to be larger than a threshold value that is
       determined by

                                             rf
                                  y. ^^L !
                                   bias    2g
       where N d is the donor impurity density in n-type semiconductor region, d is
       the width of the depletion region, q e is the electron charge.
          MSM photodetectors have been fabricated on thin Si wafers and GaAs
       substrates with rough back surfaces. The thin film ensures that the photo-
       generated electron-hole pairs are only created in the high field region, making
       high-speed operation feasible. Also, the rough back surface scatters the light
       and traps it inside the thin film to compensate for otherwise low quantum
       efficiency. Figure 4.32(a) shows 2-/mi fine lines of the electrode pattern
       employed for MSM detector fabrication. Since we intend to develop an
       optoelectronic interconnection employing this structure, we integrated the
       polyimide channel waveguide array with a 1 x 12 GaAs MSM photo detector
       array through 45° TIR micromirror couplers. First, we fabricated the high-
       speed MSM photodetector arrays on the GaAs substrate. The fabrication
       procedures for 1 x 12 MSM photodetector arrays are as follows. First, the
        100-nm-thick SiO 2 was deposited on the surface of semi-insulating LEG
       grown GaAs (100) wafer by plasma-enhanced chemical deposition (PECVD).
       Then the interdigitized electrode pattern was formed by conventional photo-
       lithography technique and part of the SiO 2 was etched away using 1:6 oxide
       etch ant. The interdigitized gold electrodes were formed by first depositing
        100 nm gold directly on the surface of the GaAs wafer using electron beam
       evaporation and then lifting it off to form the Schottky contacts. The inter-
       digitized contact fingers have the same 2-/mi width and spacing, resulting in a
   342   343   344   345   346   347   348   349   350   351   352