Page 351 - Introduction to Information Optics

336 6. Interconnection with Optics

Table 6,3
Layer Structure of a VCSEL

Al(x)GaAs Physical Doping
fraction Optical thickness level
3
Layer M thickness [/'m] Dopant [cm"' ] Type Comments
GaAs 0.00 625.0000 n + Substrate
AlGaAs 0.90 0.0400 Si 1-3E18 n Sacrificial
layer
GaAs 0.00 0.0500 Si 1-3EJ8 n Buffer
AlGaAs Grade 0.0100 Si 1-3E18 n 1/2 n-DBR
AlGaAs 0.90 AM Si 1-3E18 n
AlGaAs Grade 0.0100 Si 1-3E18 n
AlGaAs 0,15 A/4 Si 1-3E18 n n-DBR
AlGaAs Grade 0.0100 Si 1-3EJ8 n 32 x
AlGaAs 0.90 A/4 Si 1-3E18 n
AlGaAs 0.60 0.0920 nid Spacer
AlGaAs 0.30 0.0100 nid Barrier
GaAs 0.00 0.0070 nid Quantum well
AlGaAs 0.30 0.0100 nid Barrier
GaAs 0.00 4/./4 0.0070 nid Quantum well
AlGaAs 0.30 0.0100 nid Barrier
GaAs 0.00 0.0070 nid Quantum well
AlGaAs 0.30 0.0100 nid Barrier
AlGaAs 0.60 0.0920 nid Spacer
AlGaAs Grade 0.0100 C 3-5E18 P
AlGaAs 0.90 A/4 c 3-5E18 P
AlGaAs 0.98 0.0200 C 3-5E18 P p-DBR
AlGaAs 0.98 0.0200 c 3-5E18 P
AlGaAs Grade 0.0180 c 3-5E18 P
AlGaAs 0.15 A/4 c 3-5E18 P
AlGaAs Grade 0.0090 c 3-5E18 P
AlGaAs Grade 0.0090 c 3-5E18 P
AlGaAs 0.90 A/4 c 3-5E18 P
AlGaAs Grade 0.0090 c 3-5E18 P p-DBR
AlGaAs Grade 0.0090 c 3-5E18 P 21 x
AlGaAs 0.15 A/4 c 3-5E18 P
AlGaAs Grade 0.0090 c 3-5E18 P
AlGaAs 0.90 A/4 c 3-5E18 P
AlGaAs Grade 0.0090 c 3-5E18 P p-DBR
AlGaAs Grade 0.0090 c 3-5E18 P
AlGaAs Grade 0.0090 c 3-5E18 P
AlGaAs 0.15 A/4 c 3-5E18 P
GaAs 0.00 0.0200 Zn >5.0E19 P + Cap layer