Page 263 - System on Package_ Miniaturization of the Entire System
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Mixed-Signal (SOP) Design   237









                                        D3 = 0.120988 MM





                                          D1 = 0.125 MM

                                          D2 = 0.078125 MM




                    FIGURE 4.85  Embedded capacitor in laminate.


                    cycle of the VNA. S  is the insertion loss measured across the device at each frequency
                                     21
                    point. The real and imaginary parts of the impedance over the measured frequency
                    band can be obtained using these equations.
                       The measured thick-film capacitors are available from DuPont [84]. They are
                    compatible with the standard FR4/BT laminate printed wiring board technology and
                    can be integrated in BT laminate, as shown in Figure 4.85. The cross section of the
                    capacitor is shown in Figure 4.86. The thickness of the dielectric is in the range of
                    20 to 24 μm, and the dielectric constant is 3000. The loss tangent of the dielectric at
                    1 MHz is less than 0.05. The top copper foil and the bottom electrodes are 35 μm and
                    3 to 5  μm thick, respectively. These capacitors are available on a copper foil with
                    discrete patterned dielectrics and electrodes. The process ground rules define the
                    maximum and minimum sizes of the capacitors, which translate to 0.5 and 3 mm a
                    side, respectively.
                       Figure 4.87 shows the impedance profile of different capacitors that were measured
                    using the two-port methodology. Figure 4.88 shows the extracted dielectric constant
                    value, which remains relatively constant as observed from the figure.
                       The capacitors were modeled using the transmission matrix method (TMM) [88]. In
                    modeling the capacitor structures the fringing effects have been ignored because of the
                    large aspect ratio of these structures. Figure 4.89 shows the model-to-hardware





                                 35 μm
                                 20 μm                    Dielectric

                                3–5 μm
                                                     Capacitor cross section
                    FIGURE 4.86  Cross section of the capacitor.
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