Page 49 - System on Package_ Miniaturization of the Entire System
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26    Cha pte r  O n e



                               System      Device   Package    System      End system
                              technology                        board
                                SOB          IC      Bulky      Bulky         Bulky
                                SOC         SOC      Bulky      Bulky       Less bulky
                                MCM          IC      MCM        Bulky      Miniaturized
                                 SIP        SOC       SIP       Bulky      Miniaturized
                                                                              Highly
                                                               System       miniaturized
                                SOP         SOC       SIP
                                                              integration    nano-micro
                                                                              system
                    FIGURE 1.24  Size comparisons of the fi ve system technologies.

                    technologies. Nevertheless, SOP must successfully overcome a different set of challenges,
                    namely infrastructure and investment challenges.


               1.8  Status of SOP around the Globe
                    SOP is the ability to integrate disparate technologies to achieve diverse functions into a
                    single package, while maintaining a low profile and a small form factor supporting
                    mixed IC technologies. The SOP accomplishes this by ultrahigh wiring densities with
                    less than 5-μm lines and spaces, in multiple layers, and a variety of embedded ultrathin-
                    film component integrations, achieving greater than 2500 components per square
                    centimeter. In the SOP concept, this is accomplished by codesign and fabrication of
                    digital, optical, RF, and sensor functions in both the IC and the system package, thus
                    distinguishing between what function is accomplished best at the IC level and at the
                    system package level. In this paradigm, ICs are viewed as being best for transistor
                    density, while the system package is viewed as being best for system technologies that
                    include certain front-end RF, optical, and digital-function integration.
                       Apart from Georgia Tech, SOP research is going on in various universities, research
                    institutes, national labs, and in the research and development (R&D) divisions of
                    various companies across the world. IBM; Sandia National Labs; Motorola; NCSU; and
                    IMEC, Belgium, are actively involved in the embedded passives research. The Royal
                    Institute of Technology (KTH) Sweden, KAIST, the University of Arkansas, and Alcatel
                    are also working on SOP. IME Singapore has worked on optoelectronics mixed-signal
                    SOP. The R&D in SOP is now global as indicated in Figure 1.25.
                    1.8.1 Opto SOP
                    The Institute of Microelectronics in Singapore has built an optoelectronic SOP intended for
                    high-speed communications between a network and a home or office [42]. The approach
                    involves optical circuits made of silicon. The system transmitted data at 1 gigahertz (GHz).
                       Intel has reported developments in silicon photonics, the technique of fabricating
                    high-volume optical components in silicon using standard high-volume, low-cost silicon
                    manufacturing techniques. In 2005, researchers at Intel demonstrated data transmission
                    at 10 gigabits per second (Gbps) using a silicon modulator. Intel and the University of
                    California Santa Barbara (UCSB) demonstrated an electrically driven hybrid silicon laser
                    (Figure 1.26). This device successfully integrates the light-emitting capabilities of indium
                    phosphide with the light-routing and low-cost advantages of silicon.
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