Page 304 - Sami Franssila Introduction to Microfabrication
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Multilevel Metallization 283



             Switch to polymers is a discontinuous shift: it requires  Table 27.3 Characterization needs for new dielectrics
           a lot of work in materials science, process technology,
                                                       Parameter                 Comment
           metrology, process integration, equipment and reliabil-
           ity. For instance, adhesion and interface stability with
                                                        –  CMP rate       – Young’s modulus
           metals need to be assessed and etching and polishing             1–10 GPa, high polish rates
           processes have to be developed. Sufficient mechanical  –  T g /T d  – Glass transition and
           strength of low-k films is essential for successful CMP.          decomposition temperatures
           Fluoropolymers, aromatic hydrocarbons, poly (arylene             (ca. 450 C)
                                                                                  ◦
           ethers), parylene and PTFE offer dielectric constants  –  Plasma resistance  – Organic materials are etched
           down to ≈2.                                                      in oxygen plasma
             The next step is to go for porous materials, with ε ≈ 2  –  Cleaning resistance  – Photoresist removers and
           (also known as ULKs, for ultra-low k). Pores can be              solvents
           made by controlled evaporation, nanophase separation  – Shrinkage  – Volume changes upon heat
           or drying. Aerogels and xerogels, dried silica with 90%          treatment as solvents
           air in it, promise further improvements in ε.                    evaporate
             The ultimate dielectric is air (or vacuum) with ε ≈ 1.  –  Adhesion  – Scotch tape test is the first
           There are some practical problems with air, however:             hurdle
           mechanical strength is not very good, thermal conduc-  –  Outgassing  – Even cured films may
                                                                            release gases into sputtering
           tivity is poor and long- term stability is questionable. In      vacuum
           spite of these drawbacks, gas-filled and vacuum dielec-  – Porosity  – Tightly controlled for
           tric structures have been demonstrated.
                                                                            reproducible ε
             A wide repertoire of measurements is needed to char-  –  Pore size  – Oversized pores behave like
           acterize novel candidate materials (Table 27.3). PECVD           pinholes
           boron nitride was measured for some 15 properties (see  –  Shelf life  – Decomposition during
           Table 7.2). New polymeric low-k materials need to be             storage not unlike
           measured for 15 more parameters before they can be               photoresists
           accepted in manufacturing.                   –  Viscosity      – Film thickness depends on
             Modulated photoreflectance methods, already in use              viscosity (and spinspeed)
           in implant-dose monitoring, are useful for multilayer  –  Impurities  – (Alkali) metals have to be
           analysis when time-resolved mode is employed. A short            measured
           laser pulse heats the sample, which then expands locally,  –  CTE  – Polymeric materials have a
           giving off sound waves. Reflectivity is modulated by the          wide range of expansion
           propagating sound waves, and this can be measured by a           coefficients
           probe laser. Time-resolved measurement can distinguish  –  Loss tangent  – Electrical losses at high
           between reflections from various interfaces in the sample,        frequencies must be
           enabling multilayer measurement of both metals and               understood
           dielectrics. Optical measurements are fast, and amenable
           to wafer mapping, yielding uniformity maps.
             CMP of soft and porous materials with Young’s  developed: candidates include gas phase, optical, X-ray,
           moduli of 1 to 10 GPa is difficult because they are  positron and neutron methods.
           mechanically weak. They are also subject to peeling  When new materials are introduced, they are eval-
           by shear forces, especially when multiple layers of  uated in several phases. Initial tests are carried out
           materials are present (and there can be tens of layers  on planar wafers using blanket films. Basic physical
           in a multilevel structure). Polymeric abrasives have  and chemical characteristics are measured: dielectric
           been tried as replacements of silica and alumina for  constant, shrinkage, moisture absorption, uniformity of
           soft material polishing. Cleaning remains a major  deposition, blanket etching and polishing. Single-level
           problem for low-k materials – post-CMP cleaning, post-  test structures are then applied to check patterning issues
           etch cleaning and photoresist strip. Many wet chemical  (etch, strip) and interface stability under various process
           cleaning solutions are out of the question because they  steps (metallization, CMP, etch). Multilevel test struc-
           penetrate pores and cause swelling. Measurement of  tures include electrical tests and more complex interac-
           pore size and porosity is needed for reproducibility  tion tests such as etch and polish stop, adhesion during
           of ultra-low k materials. Various methods are being  CMP, and so on.
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