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REFERENCES AND RELATED READINGS Koburger, C.W. et al: A half-micron CMOS logic generation,
IBM J. Res. Dev., 39 (1995), 215.
Anand, M.B. et al: Use of gas as low-k interlayer dielectric in Mann, R.W. et al: Silicides and local interconnections for high
LSI’s: demonstration of feasibility, IEEE TED, 44 (1997), performance VLSI applications, IBM J. Res. Dev., 39 (1995),
1965. 403.
Brown, D.: Trends in advanced process technology, Proc. Murarka, S.P.: Metallization, Theory and Practice for VLSI and
IEEE, 74 (1986), 1678 (special issue on integrated circuit ULSI, Butterworth-Heinemann, 1993.
technologies of the future). Ohba, T.: Multilevel metallization trends in Japan, Proc. ULSI-
Chen, W.-C. et al: Chemical mechanical polishing of low- VII (1992), MRS.
dielectric constant polymers: hydrogen silsesquioxane and Rao, G.K.: Multilevel Interconnect Technology, McGraw-Hill,
methyl silsesquioxane, J. Electrochem. Soc., 146 (1999), 1993.
3004. Small, M.B. & Pearson, D.J.: On-chip wiring for VLSI, IBM
Davis, J.A. et al: Interconnect limits on gigascale integration J. Res. Dev., 34 (1990), 858.
(GSI) in the 21st century, Proc. IEEE, 89 (2001), 305 Steigerwald, J.M., Murarka, S.P. & Gutman, R.J.: Chemical
(special issue on limits of semiconductor technology). Mechanical Planarization of Microelectronic Materials, John
Ho, P.S., Lee, W.W. & Leu, J.: Low Dielectric Constant Wiley & Sons, 1997.
Materials for IC Applications, Springer-Verlag, 2002. Wrschka, P. et al: Chemical mechanical planarization of cop-
Hsu, H.-H. et al: Electroless copper deposition for ultralarge- per damascene structures, J. Electrochem. Soc., 147 (2000),
scale integration, J. Electrochem. Soc., 148 (2001), C47. 706.