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5-2                                                              MEMS: Design and Fabrication


               TABLE 5.1 Synchrotron Radiation Facilities in the United States with Active DXRL Devoted Beamlines

                                            Ring parameters
                                            (energy, critical
               Storage ring                wavelength, current)                     Site
               Aladdin                     0.8, 1 GeV           Synchrotron Radiation Center (SRC), Stoughton, WI
                                             22.7 Å, 11.6Å
                                             260mA, 190mA
               CAMD (Center for            1.3, 1.5 GeV         Louisiana State University (LSU), Baton Rouge, LA
                 Advanced Microstructure     7.4Å, 4.8Å
                 Devices)                    400, 200 mA
               ALS (Advanced Light         1.5, 1.9 GeV         Lawrence Berkeley Laboratory (LBL),
                 Source)                     8.2Å, 4.1Å           Berkeley, CA
                                             400mA
               NSLS (National              X-ray ring:          Brookhaven National Laboratory (BNL), Upton, NY
                 Synchrotron                 2.584, 2.8 GeV
                 Light Source)               2.2Å, 1.7Å
                                             300, 250mA
                                           VUV Ring:
                                             0.808 GeV
                                             20Å
                                             1000mA
               SPEAR3 (Stanford            3.0 GeV              Standord Synchrotron Radiation Laboratory (SSRL),
                 Positron Electron           1.4Å                 Stanford, CA
                 Accelerating Ring)          500mA
               APS (Advanced               7.0 GeV              Argonne National Laboratory (ANL), Argonne, IL
                 Photon Source)              0.64Å
                                             100mA



             obtained via synchrotron radiation from a storage ring. Such X-rays, in addition to possessing atomic
             rather than optical absorption character and thereby eliminating diffraction and standing wave effects,
             possess  collimation  on  the  order  of 0.1  mrad. Combined  with  a  developer  that  has  high  selectivity
             between unexposed and exposed photoresist, this exposure capability yields mold sidewall definition with
             less than 0.1 micron run-out for a thickness of several hundred microns. This radical form of lithogra-
             phy has resulted in a new type of foundry service to provide synchrotron radiation access. In the United
             States, for example, these services may be obtained from the facilities listed in Table 5.1. Many more facil-
             ities throughout the world are actively engaged in this activity.
               Two distinct X-ray based microfabrication philosophies exist. That relatively thick (  100 microns) X-ray
             lithography was possible and could subsequently be applied to precision molding was first realized by Ehrfeld
             for application to separation nozzle fabrication for uranium isotope enrichment [Becker et al., 1982, 1986;
             Ehrfeld et al., 1987, 1988a, 1988b]. The process was given the German acronym “LIGA”representing the three
             basic processing steps of deep X-ray LIthography; mold filling by Galvanoformung, or electroforming; and
             injection molding replication, or Abformung. The approach defined by the LIGA process aims to become
             mostly independent from a synchrotron radiation X-ray exposure step by defining a master metal mold insert
             that is then used to replicate numerous further plastic molds via plastic injection molding.Recently improved
             storage ring access and the ability to expose multiple samples simultaneously has resulted in another option
             of using DXRL to form all sacrificial molds. The typical DXRL process sequence is outlined in Figure 5.1.In
             either case, the ultimate result is the ability to batch fabricate prismatically shaped components with nearly
             arbitrary in-plane geometry at thicknesses of several hundred microns to millimeters while maintaining sub-
             micron dimensional control. This result translates to 100 ppm accuracy for millimeter and submillimeter
             dimensions. Precision, or repeatability, is obtained by the batch nature of this lithographically based process.
               The  novel  implications  of this  precision  are  manifold. For  precision-engineered  componentry, an
             increase in resolution is possible over such conventional machining techniques as stamping, or fine blank-
             ing, or electrodischarge machining (EDM), while the throughput associated with batch or parallel fabri-
             cation  is  facilitated. Results  of using  DXRL-based  molding  for  the  fabrication  of EDM  electrodes


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