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X-Ray–Based Fabrication                                                                     5-7
































             FIGURE 5.5 (a) Eight-micron thick PMMA patterned with a conformal portable mask (CPM), or bilayer process.
             A  flood  deep  UV  source exposes  the  PMMA  that  was  subsequently  developed  using  G–G  developing  solution.
             (b) Resulting 6-µm-thick gold absorber pattern after PMMA stripping.

















             FIGURE 5.6 Frontside (left) and backside view of 1-µm thick silicon nitride membrane X-ray mask 5   7cm in
             area supported by a 4	 diameter silicon wafer with 8-µm thick patterned and electroplated gold absorber layer.

               Exposures  of PMMA  thicknesses  from  millimeters to over  1  centimeter  entail  substantially  different
             X-ray masks. These exposures involve X-ray photon energies over 10 keV and for sufficient contrast require
             gold absorber thicknesses over 20 microns. Because of the difficulty in precisely patterning this thickness of
             photoresist to submicron tolerances with UV lithography, a two-step mask fabrication sequence is com-
             monly employed. Consequently, a low energy X-ray mask with 2µm gold absorber is used to pattern several
             10s of microns of PMMA directly upon the high energy X-ray mask substrate. In order to maintain a max-
             imum PMMA top dose below the damage threshold high energy SR exposures of thicker photoresist must
             provide for increased filtering of softer X-rays. Some or all of the increased filtering required may be readily
             provided by the X-ray mask substrate itself leading to a thicker X-ray mask substrate with increased mask
             mechanical stiffness. Thus, the high energy mask substrate may be a relatively thick layer of low Z material,
             such as 100µm thick silicon, for example. Water cooling of the X-ray mask and exposure substrate also
             becomes a necessity with higher energy exposures due to the increased overall delivered-power during expo-
             sure. Another convenient means to enhance the contrast of a low energy X-ray mask is to provide a thick
             negative X-ray resist on the backside of what becomes a high energy X-ray mask. When exposed through
             from the frontside thin absorber pattern with SR, the backside negative resist maintains the same polarity as
             the original frontside absorber pattern and is then used as a plating mold for additional absorber deposition.
               An  X-ray  mask  manufacturability  issue  results  from  the  constraints  of using  a  membrane-based
             low-energy mask to achieve high-energy exposures. Figure 5.3 reveals that carbon as graphite at 100µm
             thickness may serve both roles. Graphite is an inexpensive rugged mask substrate capable of being practically



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