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             COLOR FIGURE 12.15 AlN (left), 96% Al O (top), and 92% Al O (right) chip level packages with Au thick-film
                                                 2  3              2  3
             metallization. These  8-pin  (I/O)  packages  were  developed  at  NASA  Glenn  Research  Center  for  low-power  SiC
             electronics and sensors for operation up to 500°C.









































             COLOR FIGURE 12.16 AlN substrate and Au thick-film metallization based printed circuit board designed for the
             8-pin (I/O) AlN packages shown in Figure 12.15.






















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