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COLOR FIGURE 12.15 AlN (left), 96% Al O (top), and 92% Al O (right) chip level packages with Au thick-film
2 3 2 3
metallization. These 8-pin (I/O) packages were developed at NASA Glenn Research Center for low-power SiC
electronics and sensors for operation up to 500°C.
COLOR FIGURE 12.16 AlN substrate and Au thick-film metallization based printed circuit board designed for the
8-pin (I/O) AlN packages shown in Figure 12.15.
© 2006 by Taylor & Francis Group, LLC

