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P. 495

2 mm
                                                                  X
                                                                            Die attach material


                                0.29            SiC die
                                                                                  20 micron Au




                         0.635                        AlN or Al O substrate
                                                             2  3


                                                             4 mm
                                                      Side view of die-attach

             COLOR FIGURE 12.18 Side view of an example of die-attach structure with lateral stress attenuation. Where X
             (0mm   X   2mm) is a parameter determined by device design and packaging requirements, such as mechanical
             strength and resonant frequencies.




















                                                                                         Attached
                                            Attached







             COLOR FIGURE 12.19 FEA simulation of thermal stress of the partially attached SiC die on AlN substrate using
             20µm Au. The attached area is 1 mm   1 mm. All stress units are MPa. (a) Von-Mises stress contour plot of top half
             of partially attached SiC die. Attaching area is 1 mm   1mm. (b) Von-Mises stress contour plot of bottom half of
             partially attached SiC die. Attaching area is 1mm   1mm.



























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