Page 156 - Mechatronics for Safety, Security and Dependability in a New Era
P. 156

Ch29-I044963.fm  Page 140  Tuesday, August 1, 2006  3:05 PM
            Ch29-I044963.fm
               140
               140    Page 140 Tuesday, August  1, 2006  3:05 PM
               many  arrayed  sensing  elements  by this technology.  The schematic  view  of concept  of arrayed  tactile
               sensor for robotic finger  is shown in Fig.  1.









                                              The sensors arranged in the array


                 Figure  1: Schematic view of concept of arrayed tactile sensor for robotic finger  (future  work)

               In this paper, a microstructure having a pillar and a diaphragm is fabricated.  The schematic structure of
               one  sensing  element  is  shown  in Fig. 2 [8]. In near  future,  by arranging  many  of this  structure, the
               development  of a  micro  tactile  sensor  which  can be used  to  realize  a  robot's  fingertip  is aimed  at.
               Piezoresistors are fabricated  on a silicon  diaphragm to detect the distortion  which  is caused  by a force
               input to a pillar on the diaphragm. Three components of force in x, y, z direction can be simultaneously
               detected  in this  sensing  element. The principle  of measurement  is shown  in Fig. 3. Piezoresistors are
               formed  by  boron  ion-implantation  on  n-type  Si  substrate.  In  order  to  determine  a  piezoresistors
               arrangement,  FEM  analysis  is  carried  out.  This  device  has  four  features  as  follows:  1)  It  has
               three-dimensional  structure  at the front  and back  side of SOI substrate. 2) Tt is able to be miniaturized
               by  using a semiconductor  process. 3) This  sensor  utilizes  sensitive  semiconducting  piezoresistors. 4)
               This  sensor  is able to detect  three  components  of the force  in x, y  and z direction  by arrangement of
               four piezoresistors.


                 Three  dimensional  structures  F r o n t s i d e  I  a = 220um  Back side
                 are  fabricated  on  front  and  ^ A  ,  b = 400  urn
                 back side of SOI substrate.
                                                       c = 900  um
                   SOI  substrate                               Piezoresistors
                    Upper  surface                              on silicon
                                                                diaphragm
                     Si(500/im)
                     Si(100y m) Sl °
                     Back  side
                                 Figure 2: Structure of a tactile sensing element

                                    f
                                      IVertic ;  direction
                                      Vertical
                                                     Horizontal  direction
                                                      f

                              1              I

                           Compressive  Compressive  Tensile stress Compressive
                              stress    stress                  stress
                                    Figure 3: Principle of measurement
   151   152   153   154   155   156   157   158   159   160   161