Page 130 - Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim
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110    STANDARD MICROELECTRONIC TECHNOLOGIES

   Table  4.11  Relative  merits  of  MCM-C  technologies, Adapted  from  Doane  and  Franzon (1993),
   with one being  the best
   Property               Thick-film  HTCC     LTCC     Benefit

   Top-layer  dimensional     1         3        2      Improved  wire-bond,
     stability                                            assembly  yield  stability
   Low  K  values             1         3        1      Improved  high-frequency
                                                          performance
   High-conductivity          1         3        1      Smaller  line and space
     metallisation                                        designs
   High mechanical  strength  2         1        3      More  rugged  package
   High thermal               2         1        3      Good  thermal characteristics
     conductivity
   CTE  matched  to alumina   2         3        1      Capability  of  assembly
     or silicon
   Hermeticity                2         1        1      Development of  packages
   Excellent  dielectric      3         1        1      More consistent  electrical
     control                                              performance
   Surface  roughness         3         2        1      Better high-frequency
                                                         performance


   Table 4.12  Properties  of  some  commonly  used  MCM-C  materials.  Adapted  from  Doane  and
   Franzon  (1993)
   Property                Units      AI 2O 3   AI 2O 3     BeO         A1N

   Purity                  %           99.5      96        99.5       98-99.8
   Colour                     -       White     White      White      Dark grey
                              6
   CTE  at  25 to  400°C   10- /°C      7.6       7.1       9.0         4.4
                               3
   Density                 g/cm         3.87      3.7       3.01        3.255
   Dielectric  constant at    -         9.9       9.5       6.5       8.8-8.9
     1  MHz                  –3
   Dielectric  loss tangent at  10      0.1       0.4       0.4       0.7-2.0
     1 MHz
   Dielectric  strength    kV/mm       24        26         9.5        10-14
   Flexural  strength      GPa        400       250       170-240     280-320
   Resistivity             ft-cm       10 14     10 14      10 15      >10 13
   Specific  heat  capacity  J/g.°K     -         -          -          0.74
   Thermal  conductivity   W/m.°K     20-35     20-35     250-260     80-260


     The  choice  of  ceramic  substrate  is  important  and  the  >99  percent  alumina
   has  a  low  microwave  loss,  good  strength  and  thermal  conductivity, and  good  flatness.
   However,  it  is  expensive  and  96  percent  alumina can  be  used  in  most  applications.  In
   cases in which a high thermal conductivity is required (e.g. power devices), beryllia (BeO)
   or aluminum nitride  (A1N) can  be used, although  these  involve a higher cost.  Table 4.12
   summarises  the  key properties  of  the  ceramic  substrates.
     In  addition,  modules  wherein interconnections are made by thin films are classified  as
   MCM-D   and  those  made  by  plastic  (organic)  laminate-based  technologies  are  classified
   as  MCM-L.  Table  4.13  shows  a  comparison  of  the  typical  properties  of  the  three  main
   types  of  MCM  interconnection  technologies.
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