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Integrated Pyr oelectric Sensors     153


                 Pyroelectric
                 layer—substrate  T   (K)  T    (K)  Ratio 1st  Ratio 2nd
                                  exceed   neighbor
                 PVDF–silicon    0.03     0.002     6.6 × 10 –2  6.6 × 10 –2
                 PVDF–PET        0.06     0.005     8.3 × 10 –2  2.5 × 10 –2
                 High thermal    0.1      0.001     1 × 10 –3  4 × 10 –3
                 conductive
                 layer–silicon

               TABLE 4.3  Thermal Crosstalk Between Adjacent Sensor Elements

               to the statement in several publications, that PVDF is advantageous in
                                                             6
               array applications because of its poor heat conductivity.  According to
               the fact that the thermal crosstalk between the excited element and the
               second neighbor is only 2.5% for a distance separation of 10 μm, virtu-
               ally no thermal crosstalk is expected for elements that are separated by
               about 50 to 100 μm.

               4.2.5 Description of Transistor Part

               Why Do We Need an Organic Thin-Film Transistor
               and What Are the Requirements?
               One very important aspect in capacitive pyroelectric sensors is the
               fact that they are high-impedance devices with a resistance R  that is
                                                                   p
               typically in the gigaohm range. If such a sensor is connected in paral-
               lel to a low resistive load R  (R  << R ), the voltage output signal will
                                      L  L    p
               be reduced adequately to the reduction of the overall resistance R
               according to

                                                             R L
                               −1
                           −1
                     R = ( R +  R ) −1 ≈  R  and  V    =  V  ⋅      (4.33)
                           L   p      L           pyro, L  pyro  R
                                                               p
                   This would result in the collapse of the output signal, and there-
               fore, it is very beneficial to have an impedance transforming element
               inserted between sensor and load.
                   An ideal device to achieve this is a field-effect transistor because
               of its high-impedance input and its low-impedance output normally
               connected to the load. For large-area flexible physical sensor tech-
               nologies, organic thin-film transistors (OTFTs) are ideal candidates
               for impedance-transforming elements because they can be processed
               on large areas at reasonable price and the substrates can be flexible.
                   According to this, OTFTs have to fulfill several requirements to
               be applicable as impedance-transforming or, perhaps, even signal-
               amplifying elements for polymer-based large-area sensor technologies.
               First, they should operate at reasonably low voltages (< 5 V) because
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