Page 446 - Organic Electronics in Sensors and Biotechnology

1.2
Grain ~ 140 nm
1.0
Normalized drain current 0.8 2 μm

0.6
4 μm
0.4
6 μm
0.2 12 μm
36 μm
0.0
0 10 20 30 40 50 60
Time (s)
(a)
1.2
Grain ~ 1 μm
Normalized drain current 0.8 2 μm
1.0

0.6
4 μm
0.4
6 μm
0.2 12 μm
36 μm
0.0
0 10 20 30 40 50 60
Time (s)
(b)
FIGURE 1.20 Sensing data of large-scale pentacene transistors upon
exposure to 1-pentanol: normalized I under the condition of V = V = –25 V,
ds g ds
v = 45 mL/min, and d = 2 mm for different microscale channel lengths, with
average pentacene grain size of (a) 140 nm and (b) 1 μm, respectively.
(Reprinted with permission from Ref. 115. Copyright 2004, American Institute
of Physics.)

1.00

0.75

0.50

0.25

0
0 0.25 0.50 0.75 1.00
(a) (b) (c)
FIGURE 2.6 (a) AFM topographical image of D3ANT deposited on Si/SiO (1 × 1 μm)
2
and typical constant-current STM images of self-organized monolayers of D3ANT
2
adsorbed (b) at the n-tetradecane–HOPG interface (16 × 16 nm ; V =−333 mV;
t
2
I = 27 pA) and (c) at the n-tetradecane–Au(111) interface (16 × 16 nm ; V =−62 mV;
t t
I = 83 pA). (Reproduced by permission of The Royal Society of Chemistry, Ref. 131.)
t