Page 449 - Organic Electronics in Sensors and Biotechnology

Temperature lift Current response
10 nm 10 nm
150 nm 10 –7 150 nm
10 2 400 nm 400 nm
1 μm 1 μm
Temperature lift (K) 10 –2 0 Current (A) 10 –8
10 μm
10 μm
100 μm
100 μm
10
10 –9
10 –4
10 –4 10 –2 10 0 10 2 10 4 10 6 10 –4 10 –2 10 0 10 2 10 4 10 6
Frequency (Hz) Frequency (Hz)
(a)
Temperature lift Current response
10 4
10 nm 10 nm
150 nm 10 –6 150 nm
10 2 400 nm 400 nm
1 μm
1 μm
Temperature lift (K) 10 –2 0 100 μm Current (A) 10 –7 100 μm
10 μm
10 μm
10
10 –4 10 –8
10 –6 10 –9
10 –4 10 –2 10 0 10 2 10 4 10 6 10 –4 10 –2 10 0 10 2 10 4 10 6
Frequency (Hz) Frequency (Hz)
(b)
Temperature lift Current response
10 4
10 nm 10 nm
150 nm 150 nm
10 2 400 nm 400 nm
1 μm 10 –7 1 μm
Temperature lift (K) 10 –2 0 100 μm Current (A) 10 –8 100 μm
10 μm
10 μm
10
10 –4

10 –9
10 –4 10 –2 10 0 10 2 10 4 10 6 10 –4 10 –2 10 0 10 2 10 4 10 6
Frequency (Hz) Frequency (Hz)
(c)

FIGURE 4.19 Temperature lift and current response with different thicknesses of
the pyroelectric layer on 200 μm thick substrate of (a) glass, (b) silicon, and (c) PET,
calculated for the values of R = 100 MΩ and C = 75 pF.
i i