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3 Thyristors 53
FIGURE 3.38 Per phase thyristor-controlled inductor (TCI) and thyristor-switched capacitor (TSC) system.
FIGURE 3.39 Static transfer switch used in a UPS system.
References 5. C. V. Godbold, V. A. Sankaran, and J. L. Hudgins, ‘‘Thermal analysis
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2. S. K. Ghandi, Semiconductor Power Devices Ð Physics of Operation thyristors,'' IEEE Tran. PEL 2: 143–148 (1987).
and Fabrication Technology, John Wiley and Sons, New York, 1977, 7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley and
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3. B. J. Baliga, Power Semiconductor Devices, PWS Publishing, Boston, 8. V. A. Sankaran, J. L. Hudgins, and W. M. Portnoy, ‘‘Role of the
1996, pp. 91–110. amplifying gate in the turn-on process of involute structure thyris-
4. B. Beker, J. L. Hudgins, J. Coronati, B. Gillett, and S. Shekhawat, tors,'' IEEE Tran. PEL 5:2, 125–132 (1990).
‘‘Parasitic parameter extraction of PEBB module using VTB technol- 9. S. Menhart, J. L. Hudgins, and W. M. Portnoy, ‘‘The low temp-
ogy,'', IEEE IAS Ann. Mtg. Rec., 467–471, Oct. 1997. erature behavior of thyristors,'' IEEE Tran. ED 39: 1011–1013 (1992).