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EPITAXY

EPITAXY 15.17

REFERENCES

1. Royer, L., Bull. Soc. Franc. Miner. 51, 7 (1928).
2. Horikoshi, Y., et al., Jpn. J. Appl. Phys. 27, 169 (1988).
3. Tishler, M. A., and S. M. Bedair., Appl. Phys. Lett. 48, 1681 (1986).
4. Gusev,. E. P., et al., Microlectron. Eng. 69, 2–4 (2003).
5. Bourret, A., Appl. Surf. Sci. 164, 3 (2000).
6. Ramdani, J., et al., Appl. Surf. Sci. 159/160, 127 (2000).
7. Curie, M. T., et al., Appl. Phys. Lett. 72, 14 (1998).
8. Foxon, C. T., Principles of Molecular Beam Epitaxy, Handbook of Crystal Growth, Vol. 3. Elsevier,
Amsterdam, 1994, p. 157.
9. Ho, P., et al., Proc. 194th Mtg. Electrochem. Soc. PV 98-23, 117 (1999).
10. Stringfellow, G. B., Organomettalic Vapor-Phase Epitaxy. Theory and Practice. Academic Press, New York,
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11. Wolf, S., and R. N. Tauber, Silicon Processing for VLSI Era. Process Technology, Vol. 1., Lattice Press,
Sunset Beach, CA, 1986.
12. Hakuba, H., et al., J. Cryst. Growth, 207, 77 (1999).
13. Kommu, S., et al., J. Electro Chem. Soc. 147, 1538 (2000).
14. http://public.itrs.net/Files/2003ITRS/Home2003.htm.

FURTHER READING

Baliga, B. J., Epitaxial Silicon Technology. Academic Press, New York, 1986.
Crippa. D., D. L. Rode, and M. Masi, Silicon Epitaxy, Semiconductors and Semimetals, Vol. 72, Academic Press,
New York, 2001.
Parker. E. H. C., The Technology and Physics of Molecular Beam Epitaxy, Kluwer Academic Publishers,
Dordrecht, 1985.

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