Page 91 - The Art and Science of Analog Circuit Design
P. 91

Signal Conditioning in Oscilloscopes and the Spirit of invention




             Figure 7-10.                                 10MQ
                                                                    'bias
          Bootstrapping the
          drain with a dual-
                                                            1QnF
            gate MOSFET.
                                                BF996S




                                                               2pF || 10KQ
                                                   bias



                          it does not boost the gain at DC and low frequencies. The response there-
                          fore is not very flat, but we can fix it later. From 1kHz to 100MHz the
                          gain is greater than 0.985 and therefore highly independent of tempera-
                          ture. The 1 % settling time is very good at 1 .Ons.
                            Several problems remain in the bootstrapped source follower of Figure
                          7-10. First, the gate has no protection whatever from overvoltages and
                          electrostatic discharges. Second, the gate-source voltage will vary drasti-
                          cally with temperature, causing poor DC stability. Third, the 1/f noise of
                          the MOSFET is uncontrolled. The flatness (Figure 7-12) is very poor
                          indeed. Finally, the bootstrapped source follower has no ability to handle
                          large DC offsets in its input.
                            Figure 7-13 introduces one of many ways to build a "two-path" im-
                          pedance converter that solves the above problems (Evel 1971, Tektronix
                          1972). DC and low frequencies flow through the op amp, whereas high
                          frequencies bypass the op amp via C1. At DC and low frequencies, feed-

                                                       Drain


              Figure 7-11.
         Linear model of the  Gate 2
         BF996S dual-gate,
         depletion MOSFET,



                                                                             •*ds
                          Gatel









                                                       Source



         74
   86   87   88   89   90   91   92   93   94   95   96