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190  A COmPrehenSIVe GUIDe TO SOlAr enerGy SySTemS



             dimensions. Details about this technology can be found in ref. [2]. Although ribbon solar
             cell technology was expected to be very promising, at present it has become marginal and
             represents less than 1% of world production [4].

             9.4  Crystalline Silicon PV Cell Design and Fabrication
             Technology

             As described in this chapter, the cell design and fabrication processes have to maximize
             power production from incoming irradiance and also minimize all kind of losses (optical,
             recombination, and electrical) while the processing of materials and the techniques are
             selected to minimize costs while maintaining a relatively high efficiency.

             9.4.1  BSF Solar Cells

             After 30 years of development, the majority of c-Si solar cell production is currently based
             on a very standardized process [2,3,7]. At present, more than 80% of PV module produc-
             tion start from P-type c-Si wafers (both monocrystalline and multicrystalline). These wa-
             fers are made with a Pn junction over the entire front surface and a full-area aluminum-
                                        +
             based metallization with a PP  structure on the rear. The design of this cell type is shown
                                                   +
             in Fig. 9.8. An electric field forms at the PP  interface which introduces a barrier to minor
             carrier flows to the rear surface. The minor carrier concentration is thus maintained at
             higher levels in the bulk of the device and, consequently, it results in a decrease of surface
             recombination at the rear contact. This type of structures is known as the BSF (back sur-
             face field) technology [10].
                On the front side, surface reflectivity is decreased by combination of surface texturing
                                           +
             and antireflection coating. The n P junction is situated approximately 0.4 µm below the























             FIGURE 9.8  The BSF cell structure, widely used for mass production.
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