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96    Cha pte r  T h ree


                       A new generation of chip stacking began to evolve in the 1990s. It is stacking of bare
                    chips leading to higher stacking density. The electrical performance was also greatly
                    enhanced by employing short interconnections that include wire bonding, tape
                    automated bonding (TAB), or newly introduced side termination methods. Even though
                    the wire bonding technology had been used since the 1970s, it was only in the 1990s
                    when the technology began to be applied to SIP on a commercial scale. A few package
                    stackings were also demonstrated by employing the same configuration as chip stacking
                    with side termination interconnects.
                       The wire bonded chip stacking interconnection led to the introduction of flip chip
                    interconnection for SIP around 2000 when flip chip became a high-volume assembly
                    technology. Application of embedded IC technology to chip stacking enabled chip-scale
                    package (CSP) stacking. At about this time, some of the limitations of chip stacking
                    technologies were also realized. This led to alternatives to chip stacking, which include
                    package-on-package (PoP), package-in-package (PiP) and folded-stacked chip scale
                    package (FSCSP).
                       The following two sections describe widely used non-TSV chip and package
                    stacking technologies currently in use.

                    3.3.2 Chip Stacking
                    Over the past few years, chip stacking has emerged as an effective solution for integrating
                    similar or dissimilar chips. Integrating chips vertically in a single package multiplies
                    the amount of silicon that can be crammed in a given package footprint, conserving
                    board real estate. At the same time, it enables shorter routing of interconnects from chip
                    to chip, which speeds signaling between them. Initial applications of chip stacking were
                    two-chip memory combinations such as flash and SRAM. Memory stacking remains
                    the most popular even today but includes new variations like flash plus flash. More
                    recently, it has been further extended beyond memories to include the combination of
                    logic and analog ICs. In this section, various chip stacking architectures are introduced
                    with the basic underlying technologies for their chip stacking.

                    Wafer Thinning, Handling, and Dicing
                    Advances in chip stacking technologies are enabling the stacking of more dies in a given
                    height. To accomplish this basic goal, a variety of underlying technologies have been
                    developed, which include wafer thinning, thin wafer handling, and dicing as described
                    here.
                    Wafer Thinning  Wafer thinning is an essential process step before chip or package
                    stacking of SIP modules because it reduces stack height and enables the addition of
                    more chips without increasing the overall stack height. Stacking multiple chips helps to
                    minimize the xy package dimensions, while thinning minimizes the total height of the
                    z dimension. Figure 3.17 shows the evolution of wafer production in diameter, thickness,
                    and wafer-thinned dimensions during the last 50 years [11]. Larger wafers require
                    thicker silicon to withstand wafer manufacturing, while new packaging trends such as
                    SIP continue to require thinner final chips. The industry has decreased chip thickness
                    by about 5 percent a year. This trend is expected to continue, leading to wafers as thin
                    as 20 μm by 2015. Figure 3.18 shows the number of chips to be expected in SIP and the
                    Si chip thickness requirement for the stacking [12]. Future SIP definitely requires
                    stacking a larger number of thinner chips.
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