Page 77 - Sami Franssila Introduction to Microfabrication
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56 Introduction to Microfabrication















                        Resist dispensing    Acceleration      Final spinning 5000 rpm
                        (a few millilitres)  (resist expelled)  (partial drying via evaporation)
            Figure 5.9 Spin-coating process


            on the wafer size and desired film thickness, a drop  and grow by condensation reaction,
                           3
            of 1 to 10 ml (cm ) is dispensed at the wafer centre.
            Acceleration to ca. 5000 rpm spreads the liquid towards  (OR) n M–OH + HO–M(OR) n −→
            the edges. Half of the solvent can evaporate during              (OR) n M–O–M(OR) n + H 2 O
            the first few seconds, so rapid acceleration is a must
            because viscosity changes with solvent content, and  A great variety of simple methods can be used for
            radially non-uniform thickness will result from viscosity  sol–gel processing: for example, dipping, spraying
            differences. Spin speed can be controlled to ca. ±1 rpm,  and spinning. Compositional variation (by changing
            and an error of ±50 rpm will result in 10% thickness  alkoxides ratios) is easy. Thickness can be tailored not
            differences. Turbulence (both from the spin process itself  only by spin speed but also by chemical modifications
            and from cleanroom airflows) and ambient humidity  in the organic side chain R. Film thicknesses of
            (which is affected by exhaust from the spinner bowl and  hundreds of micrometres are possible for both glassy
            the cleanroom environmental control) affect evaporation  SiO-type materials and ceramics like lead–zirconium
            rate, and consequently, film thickness. Pinhole defects in  titanate (PZT).
            spin-coated films are thickness-dependent: thinner films  Drying of gel leads to drastic volume shrinkage
            are more defective. Pinholes can be caused by particles  (easily by a factor of 10), and the resulting material
            on the wafers, and also by particles in the dispensed  is known as xerogel. Supercritical drying eliminates
            fluid, even though all chemicals in microfabrication have  capillary forces and collapse of the gel, leading to
            been filtered with submicron filters. Air bubbles formed  aerogels, which can be 99% void with only 1% solid
            during dispensing (caused by e.g., an unclean dispense  material. Such a material could be the ultimate dielectric,
            tip) can cause either pinholes or large bubbles, in the  with a dielectric constant ε close to unity. Application of
            millimetre range.                            these materials as structural parts in microdevices will
              Spin-coated films fill cavities and recesses because  be difficult, but as sacrificial materials they could be
            they are liquids during spin coating. This is advan-  easily removable.
            tageous for gap filling and smoothing, but if uniform
            thickness over the topography is desired, spinning is not
            ideal. Room temperature spinning is always accompa-  5.7 METALLIC THIN FILMS
                                          ◦
            nied by baking in the range 100 to 250 C.
                                                         Metallic thin films have various applications in micro-
                                                         fabricated devices.
            5.6.4 Sol–gel
            A sol is a colloidal suspension of small (1–1000 nm)  Conductors: Resistivity is the main consideration: alu-
            particles in a liquid. A gel is 3D solid network that  minum and copper are main choices for most appli-
            forms in a colloidal liquid. A typical sol–gel process  cations, and gold is often used in RF devices, like
            uses metal alkoxides M–(O–CH 3 ) n in organic solvents.  inductor coils, to minimize resistive losses. Doped
            Alkoxides hydrolyze according to               silicon (and polycrystalline silicon) can be used as a
                                                           conductor, but its resistivity is very high compared
                  M(OR) n + xH 2 O −→ M(OH) n + xROH       to metals.
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