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FUNDAMENTALS                            CH. 5 CHARACTERIZATION METHODS FOR NANOSTRUCTURE OF MATERIALS

                                                                            Vacuum
                                                                 Metallic tip  level
                                                                                     t
                                                                                        tunneling
                                                                                         current
                                                                               E Ft                      s
                                                                           V                       eV
                                                                                                         E
                                                                                                          Fs
                                                                  Sample                    z
                                                                  surface        t                        s
                                                                                Metallic tip Tunneling   Sample
                                                                                           gap     surface
                                                                    (a)                    (b)
                                                                 Figure 5.3.8
                                                                 (a) Configuration of a metallic tip and a sample surface.
                                                                 (b) Energy diagram.
                                                                 which is based on the  Wentzel-Kramers-Brillouin
                                                                 (WKB) approximation.
                                                                         ∫  eV
                                                                   IV()      s ( E) (  eV    E T z eV E)d E  (5.3.3)
                                                                                           (
                                                                                         )
                                                                                            ,
                                                                                               ,
                                                                                 t
                                                                          0
                  Figure 5.3.7
                                                                        s
                                                                             t
                  Tapping-mode AFM image of gold nanoparticles.  where,   and   are the density of state of the sample
                                                                 and the tip, respectively. E is energy relative to Fermi
                                                                 level. T is the probability of tunnel transition with bias
                  5.3.2 STM                                      voltage,  V, and tunneling distance,  z.  T is derived
                                                                 from the following equation [3].
                  STM (scanning tunneling microscope) is one of
                  SPMs for imaging of surface state and profile like             ⎛  z 2  2m    +    t  eV  ⎞
                                                                                            s
                                                                                 ⎜
                                                                         ,
                                                                     (,
                  AFM (see Fig. 5.3.1 in the former section to make a  Tz eV E)    exp       2     2     E  ⎟ ⎠
                                                                                 ⎝
                  comparison of STM with other microscopes). In
                  STM, the voltage is applied between the metallic tip                                (5.3.4)
                  sharpened to a single atom point and a conductive
                  sample. Then the metallic tip is very close to the sam-  where  m is electron mass,  h is Planck constant
                  ple surface (near 1 nm). STM scans the tip over the  ( h/2p), T is a monotonously increasing function of
                  sample surface to get atomic-resolution topographical  bias voltage, V, but an exponentially decay function
                  image by the detection of a tunneling current flowing  of the distance z. Thus the tunneling current is very
                  between the tip and the sample. In fact, STM provides  sensitive to the distance z. It is sensitive enough to
                  images of the electric state of sample surface. Thus in  control the distance between the tip and the sample
                  a precise sense, STM image is different from the real  surface with atomic resolution.
                  topographical data using  AFM.  The sample STM
                  requires a certain level of electrical conductivity in  5.3.2.2 Instrumental configuration
                  samples. The imaging is carried out in air and vac-  Two primary modes of STM imaging are constant-
                  uum. The special tip enables the imaging in liquid.  current mode and constant-height mode. Fig. 5.3.9
                                                                 shows schematic diagram of STM.  The sample is
                    5.3.2.1 Tunneling current                    located on the tube piezo scanner, which moves the
                  There is a vacuum gap between a sharp metallic tip and  sample in the x–y–z directions with atomic resolution
                  metallic sample surface (Fig. 5.3.8a).  When the tip  (In some STMs, the piezo scanner is mounted on the
                  approaches within about 1nm of the sample while  tip). Proportional-Integral-Derivative (PID) controller
                  applying bias voltage between the tip and sample sur-  keeps the tunneling current constant with applied bias
                  face, the tunneling current flows from the tip to the sam-  voltage between the tip and the sample surface by
                  ple through the gap (see Fig. 5.3.8a).  The energy  adjusting the distance between the tip and the surface
                  diagram shows Fig. 5.3.8b.  The bias voltage,  V, is  using feedback control of z voltage of the piezoelectric
                  smaller than the work function of the sample,   and the  scanner (constant-current mode). The Ruster scan of
                                                      s
                  work function of the tip,   (eV	(     )/2), the tun-  the tip provides the distribution of  z voltage corre-
                                       t
                                              t
                                                  s
                  neling current, I, is described by the following equation  sponding to the sample profile in x–y plane.
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