Page 311 - Radar Technology Encyclopedia
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301   phase shifter, continuous                                           phase shifter, field-effect tetrode



           A continuous phase shifter is one with a gradual (continu-  Electrical phase shifters implement phase control by means
           ous) phase shift within the required limits when the external  of semiconductor device electrical control, or as the result of
           exposure is applied. In semiconductor phase shifters, such an  dielectric and magnetic permeability variation when external
           exposure is the control voltage, in ferrite phase shifters, it is  electrical and  magnetic  fields are applied  to  dielectric and
           external magnetic field, in some types of phase shifters it is  magnetic plates. (See semiconductor phase shifter, ferrite
           mechanical force (see mechanical phase shifter). Continu-  phase shifter, Fox phase shifter.). In opposition to mechani-
           ous  phase shifters can be feed-through  or reflex  phase  cal phase shifters, they give the possibility of reaching high
           shifters, typically based on varactors and field-effect tetrodes.  phase shift speed: hundreds of megahertz instead of hundreds
           They enable the receptions of the continuous phase inversion  of hertz for mechanical phase shifters. IAM

           from 0 to 360°with a high degree of phase linearity. IAM  Ref.: Lavrov (1974), p. 340.
           Ref.: Skolnik (1970), p. 12.41; Gassanov (1983), pp. 146, 153; Voskresen-  A  Faraday-rotation phase shifter is  a  reciprocal phase
              skiy (1981), p. 355
                                                                shifter based on the Faraday effect, sometimes implemented
           A diode phase shifter uses as the control component a semi-  in a phase shifting unit (section of waveguide) with l/4 ferrite
           conductor PN diode (varactor) or PIN diode. Phase shifters  plate. With such a plate it works with both linear and circular
           based on PN diodes provide a gradual variation of the reac-  polarized waveforms, the  direction of  circular polarization
           tive component of diode resistance in the mode when the PN  does not change and the plane of linear-polarized signal shifts
           junction is closed. Typically they are used in low-power con-  by 90°. To eliminate this effect, two plates with the opposite
           tinuous phase shifters of the reflex type. A reflex phase shifter  direction of magnetic fields can be used. IAM
           based on a single varactor provides phase shift up to 180°  Ref.: Skolnik (1970), p. 12-31; Johnson (1984), pp. 20–36, 47.
           with a nonlinearity not worse than 5% in 5-band. PIN diode
                                                                A feed-through phase shifter changes the phase of the signal
           phase shifters are based on switching of diode states with for-
                                                                propagating along a transmission line. Phase shifters of this
           ward and reverse biases and are used in high-power (up to 50
                                                                type are used both for continuous (see  continuous phase
           kW) discrete phase shifters. The switch time in high-voltage
                                                                shifter) and discrete (see discrete phase shifter) phase con-
           phase shifters is about several microseconds, in low-voltage
                                                                trols. IAM
           phase shifters 10 to 100 ns. The most widely used discrete
                                                                Ref.: Sazonov (1988), p. 165, Kaganov (1981), p. 74.
           feed-through phase shifters provide the phase shift accuracy
           of 5° to 8° in a 5 to 10% bandwidth with an insertion attenua-  Ferrite phase shifters use the interaction of the electromag-
           tion of 1.0 to 1.5 dB.                               netic field  with ferromagnetic materials.  (See  FERRITE.)
               Diode phase shifters have small weight and size and can  They are divided into reciprocal and nonreciprocal devices.
           be done with hybrid IC technology. IAM               The former include Reggia-Spencer phase shifters,  stripline
           Ref.: Skolnik (1970), pp. 12.45–12.63; Sazonov (1988), p. 162; Kaganov   analog latching  phase shifters, and  Faraday rotation phase
              (1981), p. 75.                                    shifters. The latter include twin-slab phase shifters and strip
           A discrete phase shifter produces fixed phase shifts that dif-  line phase shifters. Nonreciprocal phase shifters have smaller
           fer from each other by the specified value. Discrete  phase  size, insertion loss, and drive power then reciprocal types, but
           shifters are based primarily on PIN diodes, field-effect tran-  they must be switched between transmit and receive modes in
           sistors, and field-effect tetrodes in feed-through or reflex cir-  the systems using a single antenna for transmitting and recep-
           cuits. There are  three main approaches to designing  these  tion.  The main  advantage of ferrite phase shifters is high
           phase shifters: switched line sections, lines loaded with LC-  power handling capability; the  main disadvantages are the
           filters, and reflex types with switch elements. The first are  dependence of ferrite materials performance on temperature
           typically used in phased arrays, but the band is comparatively  and difficulties in obtaining a high switching rate because the
           narrow. These phase shifters have several sections for differ-  control magnetic systems have large inductances. Typically,

           ent phase shifts (e.g. 22.5, 45, 90, 180°sections). The phase  ferrite phase shifters produce a phase shift of 0 to 360°, they

           adjustment error up to 16° for a 4-bit phase shifter reduces the  have phase errors less than ±5°in a 10% frequency band, and
           possibilities for  using programmable  control for  phase-fre-  insertion loss is about 1 dB. IAM
           quency response correction. Phase shifters based on LC filters  Ref.: Skolnik (1970), pp. 12.1–12.55; Johnson (1984), p. 20.32.
           use the capabilities of low-pass and high-pass filters for phase  A field-effect tetrode phase shifter is a semiconductor phase
           inverting. The use of these phase shifters enables the reduc-  shifter with active components based on a field-effect tetrode.
           tion of the losses (up to 0.3 to 0.8 dB) and the production of  There  are two  configurations: analog (continuous) and dis-
           discrete phase control from 0 to 180°. Field-effect transistors  crete phase shifters, based on the dependence of phase shift
           phase shifters have a more stable phase shift in broader band  on bias voltage in a gate electrode or on vector summation of
           than PIN diode phase shifters and they have a switch time of  several signals. The first have a phase shift up to 180° in a
           about an order less. IAM                             narrow frequency band and gain of more than 8 dB. The latter
           Ref.: Skolnik (1970), p. 12.41;Gassanov (1988), pp. 148, 151; Voskresenskiy   types realize discrete control in a 0 to 360° range and have a
              (1981), p. 360.
                                                                bandwidth of about an octave. The advantages of field-effect
                                                                tetrodes are low losses, a high speed of phase variation that is
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