Page 103 - Rashid, Power Electronics Handbook
P. 103

6 The Power MOSFET                                                                                   89

                              i
                              D


                                                    dc operating
                                                       point


                                                                                   Slope=gm
                             I
                             D                                              Q

                                                                                  ideal

                                                                           V
                                                                   V        GS                         v
                                                                    Th                                  GS
                                                     FIGURE 6.20  Input transfer characteristics.


                 At t ¼ t , i ðtÞ is given by                           The time interval Dt 32  ¼ðt ÿ t Þ is determined by assum-
                        2
                          G
                                                                                              3
                                                                                                  2
                                                                      ing that at t ¼ t , the drain-to-source voltage reaches its
                                                                                     3
                                                  I 0
                                            V GG  ÿ  ÿ V Th           minimum value determined by its on-resistance, v DSðONÞ  that
                              V GG  ÿ v ðt Þ      g m
                                     GS 2
                       i ðt Þ¼            ¼                    ð6:24Þ  is, v DSðONÞ  is given by
                        G  2
                                  V              V
                                    Th            Th
                                                                                   v       I r     ¼ constant
                 As the time constant t is very small, it is safe to assume that    DSðONÞ  0 DSðONÞ
                 v ðt Þ reaches its maximum, that is,
                  GS 2
                                                                      For t > t , the gate current continues to charge C GD  and as v DS
                                                                             3
                                     v ðt Þ  V                        is constant, v GS  starts charging at the same rate as in interval
                                      GS 2    GG
                                                                      t   t < t , that is,
                                                                              1
                                                                       0
                 and
                                                                                    v ðtÞ¼ V GG ð1 ÿ e ÿðtÿt 3 Þ=t Þ
                                                                                     GS
                                       i ðt Þ  0
                                       G
                                         2
                                                                      The gate voltage continues to increase exponentially until
                 For t   t < t , the diode turns off the load current I and  t ¼ t , when it reaches V  , at which i ¼ 0 and the device
                             3
                                                               0
                      2
                                                                          3
                                                                                           GG
                 (drain current i ) starts discharging the drain-to-source capa-  fully turns on as shown in Fig. 6.18e.  G
                              D
                 citance.
                                                                        We have equivalent circuit model when the MOSFET is
                   As v GS  is constant, the entire gate current ¯ows through  completely turned on for t > t . At this time, capacitors C
                 C GD , which results in the following relation,                                1                      GS
                                                                      and C
                                                                           GD  are charged with V GG  and (I r  ÿ V GG ), respec-
                                                                                                     0 DSðONÞ
                                                                      tively.
                                 i ðtÞ¼ i
                                  G
                                        C GD
                                                                        The time interval Dt 32  ¼ðt ÿ t Þ is obtained by evaluating
                                                                                              3
                                                                                                  2
                                           dðv ÿ v Þ
                                                  D
                                              G
                                     ¼ C                              v DS  at t ¼ t as follows:
                                                                                3
                                         GD
                                               dt
                 With v constant and v ¼ 0, we have                                      V GG  ÿ V Th
                       G             s                                         v ðt Þ¼ ÿ          ðt ÿ t Þþ V
                                                                                DS 3                3   2    DD
                                                                                           R C GD
                                                                                            G
                                              dv DS                                  ¼ I r                         ð6:26Þ
                                  i ðtÞ¼ ÿC                                             O DSðONÞ
                                   G       GD
                                               dt
                                          V GG  ÿ V Th
                                      ¼ÿ                              Hence, Dt 32  ¼ðt ÿ t Þ is given by
                                                                                       2
                                                                                    3
                                              R
                                               G
                                                                                               ðV DD  ÿ I r  Þ
                                                                                                       D DSðONÞ
                 Solving for v ðtÞ for t > t , with v ðt Þ¼ V DD , we obtain  Dt 32  ¼ t ÿ t ¼ R C GD              ð6:27Þ
                                                                                           G
                            DS
                                                                                  3
                                               DS 2
                                        2
                                                                                      2
                                                                                                  V   ÿ V
                                                                                                    GG   Th
                             V GG  ÿ V Th
                   v ðtÞ¼ ÿ           ðt ÿ t Þþ V DD  for t > t 2  ð6:25Þ  The total delay in turning on the MOSFET is given by
                    DS
                                          2
                              R C GD
                               G
                 This is a linear discharge of C GD  as shown in Fig. 6.19e.         t ON  ¼ Dt þ Dt þ Dt 32       ð6:28Þ
                                                                                            10
                                                                                                  21
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