Page 109 - Rashid, Power Electronics Handbook

TABLE 6.1 PSPICE MOSFET parameters
(a) Device dc and parasitic parameters

Symbol Name Description Default Units
Level LEVEL Model type (1, 2, 3, or 4) 1
VTO Zero-bias threshold voltage 0 V
V TO
l LAMDA Channel-length modulation 1,2a 0 v-1
g GAMMA Body-effect (bulk) threshold parameter 0 v ÿ1=2
F r PHI Surface inversion potential 0.6 V
Z ETA Static feedback 3 0
k KAPPA Saturation ®eld factor 3 0.2
2
UO Surface mobility 600 cm =V-s
m 0
Is IS Bulk saturation current 10 ÿ14 A
Js JS Bulk saturation current=area 0 A=m 2
JSSW Bulk saturation current=length 0 A=m
J SSW
N N Bulk emission coef®cient n 1
PB Bulk junction voltage 0.8 V
P B
PBSW Bulk sidewall diffusion voltage PB V
P BSW
R D RD Drain resistance 0 O
R S RS Source resistance 0 O
R G RG Gate resistance 0 O
R B RB Bulk resistance 0 O
RDS Drain-source shunt resistance a O
R ds
RSH Drain and source diffusion sheet resistance 0 O=m 2
R sh
(b) Device process and dimensional parameters
Symbol Name Description Default Units
NSUB Substrate doping density None cm ÿ3
N sub
W W Channel width DEFW m
L L Channel length DEFL m
WD Lateral diffusion width 0 m
W D
X jl LD Lateral diffusion length 0 m
Kp KP Transconductance coef®cient 20 10 ÿ6 A=v 2
t 0X TOX Oxide thickness 10 ÿ7 m
N SS NSS Surface-state density None cm ÿ2
NFS Fast surface-state density 0 cm ÿ2
N FS
NSUB Substrate doping 0 cm ÿ3
N A
TPG Gate material 1
T PG
þ1 Opposite of substrate
ÿ1 Same as substrate
0 Aluminum
XJ Metallurgical junction depth 2,3 0 m
X j
2
UO Surface mobility 600 cm =V-s
m 0
UCRIT Mobility degradation critical ®eld 2 10 4 V=cm
U c
UEXP Mobility degradation exponent 2 0
U e
VMAX Maximum drift velocity of carriers 2 0 m=s
U t
NEFF Channel charge coef®cient 2 1
N eff
d DELTA Width effect on threshold 2,3 0
y THETA Mobility modulation 3 0
(c) Device capacitance parameters
Symbol Name Description Default Units
CBD Bulk-drain zero-bias capacitance 0 F
C BD
CBS Bulk-source zero-bias capacitance 0 F
C BS
CJ Bulk zero-bias bottom capacitance 0 F=m 2
C j
CJSW Bulk zero-bias perimeter capacitance=length 0 F=m
C jsw
MJ Bulk bottom grading coef®cient 0.5
M j
MJSW Bulk sidewall grading coef®cient 0.33
M jsw
FC Bulk forward-bias capacitance coef®cient 0.5
F C
CGSO Gate-source overlap capacitance=channel width 0 F=m
C GSO
XCGDO CGDO Gate-drain overlap capacitance=channel width 0 F=m
CGBO Gate-bulk overlap capacitance=channel length 0 F=m
C GBO
XQC Fraction of channel charge that associates with drain 1,2 0
X QC
KF Flicker noise coef®cient 0
K F
AF Flicker noise exponent 0
a F
a
All superscript numbers in the Description column indicate that this=these parameter(s) are available
in this=these level number(s), otherwise it=they are available in all levels.