Page 111 - Rashid, Power Electronics Handbook

6 The Power MOSFET 97

TABLE 6.2 PSPICE MOSFET capacitance parameters and their default values for Figure 6.30a

* source ZVT-ZCS
D_Do N00111 OUT Dbreak
V_Vs N00105 9 DC 0 AC 0 PULSE 0.9.0.0.0 {D*Ts} {Ts}
L_Ls 0 N00111 {n*.16}
Kn_K1 L_Lp1 L_Lp2 L_Ls 0.995
C_Co OUT 0 70uF IC=50
V_Vin N00103 0 110
L_Li N00103 N00099 17.6u IC=0
V_Va N-109 0 DC 0 AC 0 PULSE 0 9 {-Delta*Ts/1.1} 0 0 {2.0*Delta*Ts}
{Ts}
D_Dp N00121 N00169 Dbreak
C_C7 N00111 OUT 30p
R_Ro OUT 0 25
C_C8 N00143 OUT 10p
D_Dao N00143 OUT Dbreak
D_Di N00099 N00245 Dbreak
L_Lp2 N00121 0 {n} IC=0
C_C9 N00169 N00121 10p
L_Las N00143 0 {0.4*n1}
Kn_K2 L_Lap L_Las 1.0
L_Lp1 N00245 N00169 {n} IC=0
L_Lap N00245 N000791 {n1}
C_Cp2 N00245 N00121 47u IC=170
C_Cp1 N00169 0 47u IC=170
L_Lak N000791 N000911 5u IC=0
M_M1 N000911 N00109 0 0 IRFBC30
M_M2 N00245 N00105 0 0 IRF840
.PARAM D=0.3 DELTA=0.1 N1=400u N=1mH TS=2us
**** MOSFET MODEL PARAMETERS
IRFBC30 IRF840
NMOS NMOS
LEVEL 3 3
L 2.000000-06 2.000000-06
W .35 .68
VTO 3.625 3.879
KP 20.430000E-06 20.850000E-06
GAMMA 0 0
PHI .6 .6
LAMBDA 0 0
RD 1.851 .6703
RS 5.002000E-03 6.382000E-03
RG 1.052 .6038
RDS 2.667000E+06 2.222000E+06
IS 720.200000E-12 56.030000E-12
JS 0 0
PB .8 .8
PBSW .8 .8
CBD 790.100000E-12 1.415000E-09
CJ 0 0
CJSW 0 0
TT 685.000000E-09 710.000000E-09
CGSO 1.640000E-09 1.625000E-09
CGDO 123.900000E-12 133.400000E-12
CGBO 0 0
TOX 100.000000E-09 100.000000E-09
XJ 0 0
UCRIT 10.000000E+03 10.000000E+03
DELTA 0 0
ETA 0 0
DIOMOD 1 1
VFB 0 0
LETA 0 0
WETA 0 0
U0 0 0
TEMP 0 0
VDD 0 0
XPART 0 0