Page 113 - Rashid, Power Electronics Handbook

6 The Power MOSFET 99

TABLE 6.3 Comparison of power semiconductor devices

Device type Year made available Rated voltage Rated current Rated frequency Rated power Forward voltage
Thyristor (SCR) 1957 6 kV 3.5 kA 500 Hz 100's MW 1.5–2.5 V
Triac 1958 1 k V 100 A 500 Hz 100's kW 1.5–2 V
GTO 1962 4.5 kV 3 k A 2 kHz 10's MW 3–4 V
BJT (Darlington) 1960 s 1.2 kV 800 A 10 kHz 1 MW 1.5–3 V
MOSFET 1976 500 V 50 A 1 MHz 100 kW 3-4 V
IGBT 1983 1.2 kV 400 A 20 kHz 100's kW 3–4 V
SIT 1.2 kV 300 A 100 kHz 10's kW 10–20 V
SITH 19 1.5 kV 300 A 10 kHz 10's kW 2–4 V
MCT 1988 3 kV 2 kV 20–100 kHz 10's MW 1–2 V

As power rating increases, designed and fabricated on a single chip. Such power IC
P frequency decreases
modules are called ‘‘smart power'' devices. For example,
some of today's power supplies are available as ICs for use
in low-power applications. No doubt the development of
Power (kW) 10 5 SCR GTO MCT smart power devices will continue in the near future, addres-
sing more power electronic applications.
10 4
SITH
10 3 BJT
As frequency increases,
power decreases
10 2 IGBT References
1. B. Joyant Baliga, Power Semiconductor Devices, PWS Publishing, New
York, 1996.
10 1
MOSFET
2. Lorenz, Marz and Amann, ‘‘Rugged Power MOSFETÐ A milestone
on the road to a simpli®ed circuit engineering,'' SIEMENS Application
10 0
10 0 10 1 10 2 10 3 10 4 10 5 10 6 10 7 10 8 Notes on S-FET Application, 2000.
Frequency (Hz) 3. M. H. Rashid, Microelectronic Circuits: Analysis and Design, PWS
FIGURE 6.31 Power vs frequency for different power devices. Publishing, Boston: MA, 1999.
4. A. Sedra and K. Smith, Microelectronic Circuits, 4th Ed., Oxford
Series, Oxford Univ. Press, Oxford, 1996.
continue to drive the research and development in semicon- 5. Ned Mohan, T. M. Underland, and W. M. Robbins, Power Electronics:
ductor technology. From power MOSFET to power MOS- Converters, Applications, and Design, 2nd Ed., John Wiley, New York,
IGBT and to power MOS-controlled thyristors, power rating 1995.
has consistently increased by factor of 5 from one type to 6. Richard and Cobbald, Theory and Applications of Field Effect Tran-
another. Major research activities will focus on obtaining new sistors, John Wiley, New York, 1970.
7. R. M. Warner and B. L. Grung, MOSFET: Theory and Design, Oxford
device structures based on MOS-BJT technology integration
Univ. Press, Oxford, 1999.
so as to rapidly increase power ratings. It is expected that the 8. D. K. Schroder, Advanced MOS Devices, Modular Series on Solid State
power MOS-BJT technology will capture more than 90% of Devices, MA: Addison Wesley, 1987.
the total power transistor market. 9. J. G. Gottling, Hands on pspice, Houghton Mif¯in Company, New
The continuing development of power semiconductor tech- York, 1995.
nology has resulted in power systems with driver circuit, logic 10. G. Massobrio and P. Antognetti, Semiconductor Device Modeling with
and control, device protection and switching devices being PSpice, McGraw-Hill, New York, 1993.