Page 37 - Semiconductor Manufacturing Handbook
P. 37

Geng(SMH)_CH03.qxd  04/04/2005  19:34  Page 3.16




                                    SILICON SUBSTRATES FOR SEMICONDUCTOR MANUFACTURING

                   3.16  SEMICONDUCTOR FUNDAMENTALS AND BASIC MATERIALS

                   3.6 CONCLUSIONS

                               In this brief review on semiconductor substrates, a discussion of silicon substrates and the multitude
                               of variations, which are being developed, based on silicon was presented. This is a very large sub-
                               ject and it has not been the intent of this chapter to exhaustively review all aspects of semiconductor
                               substrates. With silicon and its variants being the preeminent materials for semiconductor manufac-
                               ture the emphasis has been on this material. It is clear that the desirable properties of silicon, its ready
                               availability in quantity and the existence of a mature manufacturing base make it the desirable sub-
                               strate for other, less mature or more expensive substrates. Consequently the indirect use of silicon as
                               a substrate is perhaps just as significant as the direct use of silicon for semiconductor devices and
                               circuit manufacture. The opportunities for exploiting this material further are almost limitless.



                   REFERENCES

                                1. International Technology Roadmap for Semiconductors, http://public.itrs.net.
                                2. Y. Matsushita et al., “Semiconductor Silicon,” Proceedings of the Eight International Symposium on Silicon
                                  Materials Science and Technology, The Electrochemical Society, Pennington, NJ, 1998.
                                3. M. Aminzadeh et al., IEEE Trans. Semi. Manuf., Vol. 15, No. 4, p. 486, 2002.
                                4. G. K. Celler and S. Cristoloveanu, J. Appl. Phys., Vol. 93, No. 9, p. 1, 2003.
                                5. Proceedings of the International Symposium on Silicon on Insulator  Technology and Devices XI, The
                                  Electrochemical Society, Pennington, NJ, Vol. 2003–2005, 2003.
                                6. K. Izumi, Vacuum, Vol. 42, p. 333, 1991.
                                7. S. Krause, M. Anc, and R. Roitman, MRS Bull., Vol. 23, No. 12, p. 25, 1998.
                                8. D. Hill, P. Fraundorf, and G. Fraundorf, J. Appl. Phys., Vol. 63, p. 4933, 1988.
                                9. C. Mazure, Proceedings of the International Symposium on Silicon on Insulator Technology and Devices XI,
                                  The Electrochemical Society, Pennington, NJ, Vol. 2003–2005.
                               10. G. E. Pikus and G. L. Bir, Symmetry and Strain-Induced Effects in Semiconductors, New York: Wiley, 1974.
                               11. H. R. Huff and P. M. Zeitzoff, “SOI Wafers: Fabrication Techniques and Trends, Solid State Technol.,” p. 63,
                                  Oct 2004.
                               12. T. A. Langdo et al., Appl. Phys. Lett, Vol. 82, p. 4256, 2003.
                               13. A. Shimizu et al., “Local Mechanical Stress Control: A New Technique for CMOS Performance Inhancement,”
                                  IEDM, Vol. 26, p. 433, 2001.
                               14. S. Itro et al., “Mechanical Stress Effect of Etch Stop Nitride and its Impact on Deep Submicron Transistor
                                  Design,” IEDM, Vol. 25, p. 247, 2000.
                               15. S. Thompson et al., IEEE Electr. Device L., Vol. 25, No. 4, p. 191, 2004.
                               16. A. Ritenour et al., The Electrochemical Society, PV 2004-01, Vol. 406, 2004.
                               17. K.  V. Ravi and M. I. Landstrass,  Proceedings of the First International Symposium on Diamond and
                                  Diamond-Like Films, The Electrochemical Society, Pennington, NJ, Vol. 89–12, p. 24, 1989.
                               18. K. V. Ravi, “Wafer Flatness Requirements for Future Technologies,” Future Fab Intl., Vol. 207, p. 7, 1999.














                          Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com)
                                     Copyright © 2004 The McGraw-Hill Companies. All rights reserved.
                                       Any use is subject to the Terms of Use as given at the website.
   32   33   34   35   36   37   38   39   40   41   42