Page 127 - System on Package_ Miniaturization of the Entire System
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102    Cha pte r  T h ree


                                Wire loop
                                                                    Second bond  Wire loop
                      First bond                              Bump
                                                Second                                  First
                         Die                                   Die
                                                 bond                                   bond
                                     (a)                                     (b)
                    FIGURE 3.22  (a) Forward and (b) reverse wire bonding for chip stacking. [26]


                    Wire Bonding for Chip Stacking  The application of wire bonding for chip stacking poses
                    a few unique challenges due to height restrictions and the increased complexity of
                    stacking configurations. As die thickness decreases, the space between the different
                    wire looping tiers decreases accordingly. The wire bond loop height of the lower tiers
                    needs to decrease to avoid wire shorts between the different layers of the loop. The top
                    layer of the loop also needs to stay low to avoid exposed wire outside the molding
                    compound. The maximum loop height of the device should not be higher than the die
                    thickness to maintain optimal gaps between the loop tiers.
                       Wires can be bonded with forward or reverse bonding, as shown in Figure 3.22,
                    both of which have separate length limitations. Forward bonding is the traditional
                    approach that can handle long wire lengths and allows for higher-speed assembly. The
                    bond starts from the die and ends at the substrate (Figure 3.22a). One disadvantage of
                    this bonding approach is that the loop height over the silicon can increase the overall
                    thickness of the package. Reverse bonding or standoff stitch bonding, starts at the
                    substrate and ends at the die, creating a low loop height over the silicon and a higher
                    loop height at the substrate side (Figure 3.22b). This allows multiple bond shelves by
                    creating more wire-to-wire space and thus thinner packages. The disadvantage of the
                    reverse wire bonding process is that its manufacturing process takes significantly longer
                    time. Figure 3.23 shows a four-die stack, with the second die containing a forward wire
                    bonding and the top die with a reverse bonding. Reverse bonding on the topmost
                    stacked die can lead to overall packages that are thinner.





                                                       Reverse wire-bonding











                                                    Forward wire-bonding




                    FIGURE 3.23  Wire bond loop height profi les.
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