Page 130 - System on Package_ Miniaturization of the Entire System
P. 130

Stacked ICs and Packages (SIP)      105


                         Top grinding
                         185μ proven
                                             Self aligning
                                               solder
                         Underfilling          process
                         proven gam
                           <28μ
                                               SnAg
                            Wire-bondable  Solderable
                              Pd UBM     Pd UBM
                             Bottom
                            grinding
                                         (a)                              (b)
                    FIGURE 3.25  (a) Two face-to-face chips connected by microbumps in a fl ip chip architecture.
                    (b) Bottom chip of the stack connected to the substrate through wire bonding. [30]

                    this short interconnection enables miniaturization by eliminating long wire spans that
                    would otherwise be needed to bond the top chip. For this type of chip stacking, bottom
                    chips need both wire bonding and flip chip pads, as shown in Figure 3.26. In this
                    stacking, the bottom dies are first attached and connected to the substrate by wire
                    bonding. Then, the top dies are attached face down on the front surface of the bottom
                    die. Figure 3.25b shows such stacked chips with the flip chip interconnections between
                    two dies and the wire bonding for interconnection of the bottom dies to the substrate.
                       Figure 3.27 shows the flip chip bonded bottom die in the stack [32]. In this stacking,
                    the bottom die operates at a higher speed with its high number of I/Os. This stacking
                    method also relieves the bond-finger crowding in one concentrated region of the
                    substrate by redistributing the substrate density to two different regions: the region
                    under the die for the flip chip and further out for the wire bonded chips. This stacking
                    method has been developed for next-generation handsets and is extendable to other
                    products in the future.
                    Chip-on-Chip (COC) Stacking  In COC stacking, flip chip interconnections connect all
                    stacked chips without wire bonding. Figure 3.28 shows the COC stacking structure, in
                    which subchips are flip chip bonded on a base chip with ultrafine-pitch bump
                    interconnection and the base chip is also flip chip mounted on a package substrate. This
                    method allows the connection of a very large number of I/Os in the stack and thus a
                    significant increase in the data transfer speed between the chips.
















                    FIGURE 3.26  Bond pads of bottom dies for fl ip chip and wire bonding stacking with the bottom
                    dies fl ipped. [31]
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