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Stacked ICs and Packages (SIP)      123



                                                    Sensor chip

                                      MEMS        RF IC           MMIC

                                                    Analog LSI
                                             Power IC           Control IC


                                                     Logic IC
                                                   Flash memory

                                                      DRAM

                                                   Cache SRAM

                                                       CPU

                                                     Interposer




                    FIGURE 3.51  Heterogeneous integration by 3D TSV technology. (Courtesy: Zycube.)







                      Characteristics    TSV                        Wire Bonding
                      Interconnection    Interconnections can be area-  Only peripheral interconnect
                      arrangement        array or peripheral
                      Interconnection    Shorter interconnections   Much longer interconnect
                      length                                        length
                      Electrical parasitics  Much lower electrical   Higher parasitics
                                         parasitics
                      I/O density        Potentially high density   Lower I/O density
                                         achievable
                      Reliability        Higher reliability         Less reliable

                      Processing         IC fabrication process     Packaging process


                    TABLE 3.3  Comparison between TSV and Wire Bonding
   143   144   145   146   147   148   149   150   151   152   153