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124    Cha pte r  T h ree



                      Die-to-Die Stacking                   Wafer-to-Wafer Stacking
                      1.  Different sized dies can be stacked.  1.  Individual die sizes must match.
                      2. Alignment is easier.               2.  Alignment is more difficult.
                      3. It uses known good die (KGD) for stacking;   3. There is a lower yield because of
                        hence, there is a much higher yield.  KGD issues.
                      4.  Throughput is lower.              4.  Throughput is higher.
                    TABLE 3.4  Die-to-Die Stacking versus Wafer-to-Wafer Stacking


                       Figure 3.52 compares the throughput of stacking chip-to-wafer and wafer-to-
                    wafer [54]. It can be seen that for stacking 1000 or more chips per wafer, the wafer-to-
                    wafer stacking process has a much higher throughput, as compared to chip-to-wafer
                    stacking. However, usually this comes at the cost of a much lower yield in wafer-to-
                    wafer stacking.

                    3.4.2  Historical Evolution of 3D TSV Technology
                    The earliest development on 3D TSV technology can be traced back to a U.S. patent [55]
                    filed in February 1971 (and accepted in November 1972) by Alfred D. Scarbrough, as
                    shown in Figure 3.53. This patent introduced the concept of wafer stacking with
                    through-wafer interconnects. This shows a 3D wafer stacking arrangement with
                    alternating layers of wafers carrying memory chips and wafers with only interconnection
                    layers.
                       Figure 3.54 shows a cross-sectional schematic of the wafer stackup. The memory
                    chips are bonded to the chip-carrying wafer. The through-wafer vias are filled with
                    conductors. There are malleable contacts that connect the through-wafer vias on the
                    two wafers (the chip-carrying wafer and the combined interconnection and spacer
                    wafer). The bonding is performed by pressure and temperature to achieve wafer
                    stacking together.
                       In 1980, T. R. Anthony of GE [56–57] demonstrated through-wafer vias drilled in
                    silicon-on-sapphire (SoS) wafers by a laser drilling technique. In 1981, he subsequently


                                 16
                                 14
                                                     Wafer-to-wafer:
                                 12
                                                    10 wafer per hour
                                Wafers/hour  8               7200 uph
                                 10
                                  6
                                                             720 uph
                                  4                          3600 uph  Chip-to-wafer
                                  2
                                  0
                                      500     1000   2000    3000    4000    5000
                                                       Chips/wafer
                    FIGURE 3.52  A throughput comparison between chip-to-wafer and wafer-to-wafer stacking. [54]
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