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Stacked ICs and Packages (SIP)      143


                                                          Flip chip
                                                                        Solder through wafer
                                                                        interconnect



                                                                        Silicon carrier
                                                                         ENIG metallization


                                                                         Underfill

                                                                         PCB

                    FIGURE 3.77  A perspective view (left) and a cross-sectional view of a 3D stacked Si chip carrier
                    module (ENIG = electroless nickel immersion gold). [93]


                       There are several attractive features for using an Si chip carrier. Standard Si BEOL
                    fabrication processes can be used to develop high-density wiring on the carrier at lower
                    cost while achieving a higher yield. The thermal coefficient of expansion (TCE) of the
                    chip carrier matches that of the IC. This helps in forming a very reliable connection
                    between the chip and the carrier, even while using highly miniaturized microbumps.
                    Active devices can also be fabricated in the carrier, thus providing a highly integrated,
                    multifunctional system.


               3.5 Future Trends
                    SIP is about the stacking of two or more similar or dissimilar chips to achieve module
                    miniaturization, higher performance, and lower cost than other module options. In
                    essence, the SIP allows Moore’s law to continue, not in two dimensions as in the past,
                    but in three dimensions. As seen in this chapter, the stacking began at board level in late
                    1960 and subsequently moved to module level. SIP began with chip stacking by wire
                    bonding, then by flip chip or side termination in the 1990s. Simultaneously, thinning of
                    chips is introduced to miniaturize the stacking even more.  And then came the
                    breakthrough technology, through-silicon via (TSV), driving the miniaturization to the
                    next step.
                       With this evolution of SIP technology during the last four decades, the future trend
                    for SIP technology in the next decade or two will be clearer if we look at the future
                    electronics market sectors such as mobile products, high-end computers, automobiles,
                    flat-panel high-definition TVs (HDTVs), and sensors for security, health care, and
                    environment. The consumer mobile products will advance to more multifunctionality,
                    thus realizing the digital convergent dream with flexible displays with LED as a light
                    source, thin film, or nano batteries. At the same time, wireless signal speed would go
                    even higher to the 10-GHz range in order to meet ever-increasing transmission speeds
                    for data, voice, and video. The high-end computing would go beyond terabit speed
                    with optical chip-to-chip interconnections. The automotive sector is expected to move
                    to robust and reliable on-board systems with seamless wireless connection to the
                    Internet, satellite, and cellular phones, while driving at high speed. The future flat-panel
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