Page 42 - Rashid, Power Electronics Handbook
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3







                                                                                                 Thyristors






                 Jerry Hudgins, Ph.D.            3.1  Introduction........................................................................................  27
                 Enrico Santi, Ph.D.             3.2  Basic Structure and Operation................................................................  28
                 Antonio Caiafa, Ph.D.           3.3  Static Characteristics.............................................................................  30
                 Katherine Lengel, Ph.D.             3.3.1 Current-Voltage Curves for Thyristors   3.3.2 Edge and Surface Terminations
                 Department of Electrical              3.3.3 Packaging
                    Engineering                  3.4  Dynamic Switching Characteristics..........................................................  33
                    University of South Carolina     3.4.1 Cathode Shorts   3.4.2 Anode Shorts   3.4.3 Amplifying Gate   3.4.4 Temperature
                    Columbia, South Carolina         Dependencies
                    29208 USA
                                                 3.5  Thyristor Parameters.............................................................................  37
                 Patrick R. Palmer, Ph.D.        3.6  Types of Thyristors...............................................................................  38
                 Department of Engineering           3.6.1 SCRs and GTOs   3.6.2 MOS-Controlled Thyristors, MCT   3.6.3 Static Induction
                    Cambridge University             Thyristors   3.6.4 Optically Triggered Thyristors   3.6.5 Bidirectional Control Thyristor
                    Trumpington Street
                    Cambridge CB2 1PZ, United    3.7  Gate Drive Requirements.......................................................................  45
                    Kingdom                          3.7.1 Snubber Circuits   3.7.2 Gate Circuits
                                                 3.8  P-Spice Model .....................................................................................  47
                                                 3.9  Applications ........................................................................................  50
                                                     3.9.1 Direct current-Alternating current Utility Inverters   3.9.2 Motor Control
                                                       3.9.3 VAR Compensators and Static Switching Systems
                                                     References ...........................................................................................  53




                 3.1 Introduction                                     thyristor types are controllable in switching from a forward-
                                                                      blocking state (positive potential applied to the anode with
                 Thyristors are usually three-terminal devices with four layers  respect to the cathode with correspondingly little anode
                 of alternating p- and n-type material (i.e. three p-n junctions)  current ¯ow) into a forward-conduction state (large forward
                 in their main power handling section. In contrast to the linear  anode current ¯owing with a small anode-cathode potential
                 relation that exists between load and control currents in a  drop). After switching from a forward-blocking state into the
                 transistor, the thyristor is bistable. The control terminal of the  forward-conduction state, most thyristors have the character-
                 thyristor, called the gate (G) electrode, may be connected to an  istic that the gate signal can be removed and the thyristor will
                 integrated and complex structure as part of the device. The  remain in its forward-conduction mode. This property,
                 other two terminals, anode (A) and cathode (K), handle the  termed ‘‘latching,'' is an important distinction between
                 large applied potentials (often of both polarities) and conduct  thyristors and other types of power electronic devices. Some
                 the major current through the thyristor. The anode and  thyristors are also controllable in switching from forward-
                 cathode terminals are connected in series with the load to  conduction back to a forward-blocking state. The particular
                 which power is to be controlled.                     design of a thyristor will determine its controllability and often
                   Thyristors are used to approximate ideal closed (no voltage  its application.
                 drop between anode and cathode) or open (no anode current  Thyristors are typically used at the highest energy levels in
                 ¯ow) switches for control of power ¯ow in a circuit. This  power conditioning circuits because they are designed to
                 differs from low-level digital switching circuits that are  handle the largest currents and voltages of any device technol-
                 designed to deliver two distinct small voltage levels while  ogy (systems with voltages approximately greater than 1 kV or
                 conducting small currents (ideally zero). Power electronic  currents higher than 100 A). Many medium-power circuits
                 circuits must have the capability of delivering large currents  (systems operating at <1 kV or 100 A) and particularly low-
                 and be able to withstand large externally applied voltages. All  power circuits (systems operating <100 V or several amperes)

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                 Copyright # 2001 by Academic Press.
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