Page 193 - Semiconductor Manufacturing Handbook

Geng(SMH)_CH13.qxd 05/04/2005 18:03 Page 13.16

PHYSICAL VAPOR DEPOSITION

13.16 WAFER PROCESSING

Cathode

(a) M O Target

(b) M O

(c)
M O Substrate

Anode
FIGURE 13.19 Schematic and reaction sites for reactive sput-
tering. 1

charge the customer only for the extra material as well as the sintering and bonding of the new tar-
get material (Figs. 13.21 and 13.22).

13.7.8 Sputtering Equipment

Sputtering equipment have been built in a multitude of different ways. The schematic layout of the most
common systems today is given in Fig. 13.23. The core components of such a system are the vacuum
system, the RF/DC power supply, and matching network. The key components are described below.
Vacuum System. A vacuum system consists of two chambers—the main processing chamber and an
airlock (pre-vacuum chamber). The airlock is used to accelerate processing and reduce contamination

Magnet
N S N
Cathode
Target −
e −
Ar + Metal, e.g., Al
Ar
Plasma

Substrate

Substrate holder Al
+
Anode
To vacuum
FIGURE 13.20 Schematic of magnetron sputter process and equipment. 12

Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com)
Copyright © 2004 The McGraw-Hill Companies. All rights reserved.
Any use is subject to the Terms of Use as given at the website.